Optically pumped lasing properties of (1101) InGaN/GaN stripe multiquantum wells with ridge cavity structure on patterned (001) Si substrates

Maki Kushimoto; Tomoyuki Tanikawa; Yoshio Honda; Hiroshi Amano

doi:10.7567/APEX.8.022702

Optically pumped lasing properties of (1101) InGaN/GaN stripe multiquantum wells with ridge cavity structure on patterned (001) Si substrates

Maki Kushimoto, Tomoyuki Tanikawa, Yoshio Honda, Hiroshi Amano

Materials Design Division

Research output: Contribution to journal › Article › peer-review

27 Citations (Scopus)

Abstract

We demonstrated lasing action and investigated the optical properties of (11¯01) multiquantum-well (MQW) stripe crystals on patterned (001) Si substrates. Longitudinal and higher order transverse modes were observed from a ridge waveguide structure. These results strongly suggest the possibility of fabricating (11¯01) InGaN MQW laser diodes on (001) Si.

Original language	English
Pages (from-to)	22702
Number of pages	1
Journal	Applied Physics Express
Volume	8
Issue number	2
DOIs	https://doi.org/10.7567/APEX.8.022702
Publication status	Published - 2015 Feb 1

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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title = "Optically pumped lasing properties of (1101) InGaN/GaN stripe multiquantum wells with ridge cavity structure on patterned (001) Si substrates",

abstract = "We demonstrated lasing action and investigated the optical properties of (11¯01) multiquantum-well (MQW) stripe crystals on patterned (001) Si substrates. Longitudinal and higher order transverse modes were observed from a ridge waveguide structure. These results strongly suggest the possibility of fabricating (11¯01) InGaN MQW laser diodes on (001) Si.",

author = "Maki Kushimoto and Tomoyuki Tanikawa and Yoshio Honda and Hiroshi Amano",

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AU - Honda, Yoshio

AU - Amano, Hiroshi

PY - 2015/2/1

Y1 - 2015/2/1

N2 - We demonstrated lasing action and investigated the optical properties of (11¯01) multiquantum-well (MQW) stripe crystals on patterned (001) Si substrates. Longitudinal and higher order transverse modes were observed from a ridge waveguide structure. These results strongly suggest the possibility of fabricating (11¯01) InGaN MQW laser diodes on (001) Si.

AB - We demonstrated lasing action and investigated the optical properties of (11¯01) multiquantum-well (MQW) stripe crystals on patterned (001) Si substrates. Longitudinal and higher order transverse modes were observed from a ridge waveguide structure. These results strongly suggest the possibility of fabricating (11¯01) InGaN MQW laser diodes on (001) Si.

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Optically pumped lasing properties of (1101) InGaN/GaN stripe multiquantum wells with ridge cavity structure on patterned (001) Si substrates

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