Optically coupled 3D common memory with GaAs on Si structure

M. Hirose, H. Takata, M. Koyanagi

Research output: Contribution to journalConference article

Abstract

An ultra fast data transfer speed is demonstrated for a novel three dimensional (3D) Static Random Access Memory (SRAM) consisting of multilayer silicon LSI chips on which GaAs LEDs and photodetectors are monolithically integrated for vertical optical interconnections. A unique feature of this system is the capability of parallel data transfer from one memory layer to the upper and lower memory layers by the optical interconnections. The results of static and dynamic simulations of the optically coupled 3D common memory have indicated that a block of 512 bits data can be transferred through four memory layers within 16 nsec. This is an equivalent data transfer speed of 128 Gbits/sec/layer.

Original languageEnglish
Pages (from-to)316-322
Number of pages7
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume1362
Issue numberpt 1
Publication statusPublished - 1991 Jan 1
EventPhysical Concepts of Materials for Novel Optoelectronic Device Applications II: Device Physics and Applications - Aachen, Ger
Duration: 1990 Oct 281990 Nov 2

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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