Optical transitions in InGaPN/GaP single quantum wells on GaP(100) substrates by MOVPE

S. Sanorpim, D. Kaewket, S. Tungasmita, R. Katayama, K. Onabe

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

Optical transitions in the In0.050Gao.950P0.975N0.025/GaP lattice-matched single quantum wells (SQWs) with different well widths (Lz = 1.6 - 6.4 nm) have been investigated by low-temperature photoluminescence (PL) and PL-excitation (PLE). PL spectra showed the strong visible emission from the samples which attracted to a variety of optoelectronic device applications such as light emitting and laser diodes. Comparing to the bulk film, the PL peak position and the fundamental absorption edge of PLE spectra exhibit blue-shift, which is corresponded to the quantum confinement effect by the well. Comparison between the absorption edge of PLE spectra and the finite square well calculation demonstrate that the effective bandgap energy of the InGaPN/GaP system is might be originated mainly from the N-related localized states.

Original languageEnglish
Title of host publicationSemiconductor Photonics
Subtitle of host publicationNano-Structured Materials and Devices
PublisherTrans Tech Publications
Pages224-226
Number of pages3
ISBN (Print)0878494715, 9780878494712
DOIs
Publication statusPublished - 2008 Jan 1
EventInternational Conference on Materials for Advanced Technologies, ICMAT 2007 - , Singapore
Duration: 2007 Jul 12007 Jul 6

Publication series

NameAdvanced Materials Research
Volume31
ISSN (Print)1022-6680

Other

OtherInternational Conference on Materials for Advanced Technologies, ICMAT 2007
CountrySingapore
Period07/7/107/7/6

Keywords

  • III-(III)-V-N
  • InGaPN
  • MOVPE
  • PL
  • PLE
  • Quantum confinement effect

ASJC Scopus subject areas

  • Engineering(all)

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