Optical Study of Sub-10 nm In0.3Ga0.7N Quantum Nanodisks in GaN Nanopillars

Akio Higo, Takayuki Kiba, Shula Chen, Yafeng Chen, Tomoyuki Tanikawa, Cedric Thomas, Chang Yong Lee, Yi Chun Lai, Takuya Ozaki, Junichi Takayama, Ichiro Yamashita, Akihiro Murayama, Seiji Samukawa

Research output: Contribution to journalArticlepeer-review

15 Citations (Scopus)


We have demonstrated the fabrication of homogeneously distributed In0.3Ga0.7N/GaN quantum nanodisks (QNDs) with a high density and average diameter of 10 nm or less in 30-nm-high nanopillars. The scalable top-down nanofabrication process used biotemplates that were spin-coated on an In0.3Ga0.7N/GaN single quantum well (SQW) followed by low-damage dry etching on ferritins with 7 nm diameter iron cores. The photoluminescence measurements at 70 K showed a blue shift of quantum energy of 420 meV from the In0.3Ga0.7N/GaN SQW to the QND. The internal quantum efficiency of the In0.3Ga0.7N/GaN QND was 100 times that of the SQW. A significant reduction in the quantum-confined Stark effect in the QND structure was observed, which concurred with the numerical simulation using a 3D Schrödinger equation. These results pave the way for the fabrication of large-scale III-N quantum devices using nanoprocessing, which is vital for optoelectronic communication devices.

Original languageEnglish
Pages (from-to)1851-1857
Number of pages7
JournalACS Photonics
Issue number7
Publication statusPublished - 2017 Jul 19


  • III-N compound semiconductor
  • photoluminescence
  • quantum nanodisk

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Biotechnology
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering


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