Abstract
We have demonstrated the fabrication of homogeneously distributed In0.3Ga0.7N/GaN quantum nanodisks (QNDs) with a high density and average diameter of 10 nm or less in 30-nm-high nanopillars. The scalable top-down nanofabrication process used biotemplates that were spin-coated on an In0.3Ga0.7N/GaN single quantum well (SQW) followed by low-damage dry etching on ferritins with 7 nm diameter iron cores. The photoluminescence measurements at 70 K showed a blue shift of quantum energy of 420 meV from the In0.3Ga0.7N/GaN SQW to the QND. The internal quantum efficiency of the In0.3Ga0.7N/GaN QND was 100 times that of the SQW. A significant reduction in the quantum-confined Stark effect in the QND structure was observed, which concurred with the numerical simulation using a 3D Schrödinger equation. These results pave the way for the fabrication of large-scale III-N quantum devices using nanoprocessing, which is vital for optoelectronic communication devices.
Original language | English |
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Pages (from-to) | 1851-1857 |
Number of pages | 7 |
Journal | ACS Photonics |
Volume | 4 |
Issue number | 7 |
DOIs | |
Publication status | Published - 2017 Jul 19 |
Keywords
- III-N compound semiconductor
- photoluminescence
- quantum nanodisk
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Biotechnology
- Atomic and Molecular Physics, and Optics
- Electrical and Electronic Engineering