Optical Study of Sub-10 nm In0.3Ga0.7N Quantum Nanodisks in GaN Nanopillars

Akio Higo; Takayuki Kiba; Shula Chen; Yafeng Chen; Tomoyuki Tanikawa; Cedric Thomas; Chang Yong Lee; Yi Chun Lai; Takuya Ozaki; Junichi Takayama; Ichiro Yamashita; Akihiro Murayama; Seiji Samukawa

doi:10.1021/acsphotonics.7b00460

Optical Study of Sub-10 nm In_0.3Ga_0.7N Quantum Nanodisks in GaN Nanopillars

Akio Higo, Takayuki Kiba, Shula Chen, Yafeng Chen, Tomoyuki Tanikawa, Cedric Thomas, Chang Yong Lee, Yi Chun Lai, Takuya Ozaki, Junichi Takayama, Ichiro Yamashita, Akihiro Murayama, Seiji Samukawa

Research output: Contribution to journal › Article

10 Citations (Scopus)

Abstract

We have demonstrated the fabrication of homogeneously distributed In_0.3Ga_0.7N/GaN quantum nanodisks (QNDs) with a high density and average diameter of 10 nm or less in 30-nm-high nanopillars. The scalable top-down nanofabrication process used biotemplates that were spin-coated on an In_0.3Ga_0.7N/GaN single quantum well (SQW) followed by low-damage dry etching on ferritins with 7 nm diameter iron cores. The photoluminescence measurements at 70 K showed a blue shift of quantum energy of 420 meV from the In_0.3Ga_0.7N/GaN SQW to the QND. The internal quantum efficiency of the In_0.3Ga_0.7N/GaN QND was 100 times that of the SQW. A significant reduction in the quantum-confined Stark effect in the QND structure was observed, which concurred with the numerical simulation using a 3D Schrödinger equation. These results pave the way for the fabrication of large-scale III-N quantum devices using nanoprocessing, which is vital for optoelectronic communication devices.

Original language	English
Pages (from-to)	1851-1857
Number of pages	7
Journal	ACS Photonics
Volume	4
Issue number	7
DOIs	https://doi.org/10.1021/acsphotonics.7b00460
Publication status	Published - 2017 Jul 19

Keywords

III-N compound semiconductor
photoluminescence
quantum nanodisk

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Biotechnology
Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

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Higo, A., Kiba, T., Chen, S., Chen, Y., Tanikawa, T., Thomas, C., Lee, C. Y., Lai, Y. C., Ozaki, T., Takayama, J., Yamashita, I., Murayama, A., & Samukawa, S. (2017). Optical Study of Sub-10 nm In_0.3Ga_0.7N Quantum Nanodisks in GaN Nanopillars. ACS Photonics, 4(7), 1851-1857. https://doi.org/10.1021/acsphotonics.7b00460

Optical Study of Sub-10 nm In_0.3Ga_0.7N Quantum Nanodisks in GaN Nanopillars. / Higo, Akio; Kiba, Takayuki; Chen, Shula; Chen, Yafeng; Tanikawa, Tomoyuki; Thomas, Cedric; Lee, Chang Yong; Lai, Yi Chun; Ozaki, Takuya; Takayama, Junichi; Yamashita, Ichiro; Murayama, Akihiro; Samukawa, Seiji.

In: ACS Photonics, Vol. 4, No. 7, 19.07.2017, p. 1851-1857.

Research output: Contribution to journal › Article

@article{715b7a225f004d16a6835ae1a95d8c32,

title = "Optical Study of Sub-10 nm In0.3Ga0.7N Quantum Nanodisks in GaN Nanopillars",

abstract = "We have demonstrated the fabrication of homogeneously distributed In0.3Ga0.7N/GaN quantum nanodisks (QNDs) with a high density and average diameter of 10 nm or less in 30-nm-high nanopillars. The scalable top-down nanofabrication process used biotemplates that were spin-coated on an In0.3Ga0.7N/GaN single quantum well (SQW) followed by low-damage dry etching on ferritins with 7 nm diameter iron cores. The photoluminescence measurements at 70 K showed a blue shift of quantum energy of 420 meV from the In0.3Ga0.7N/GaN SQW to the QND. The internal quantum efficiency of the In0.3Ga0.7N/GaN QND was 100 times that of the SQW. A significant reduction in the quantum-confined Stark effect in the QND structure was observed, which concurred with the numerical simulation using a 3D Schr{\"o}dinger equation. These results pave the way for the fabrication of large-scale III-N quantum devices using nanoprocessing, which is vital for optoelectronic communication devices.",

keywords = "III-N compound semiconductor, photoluminescence, quantum nanodisk",

author = "Akio Higo and Takayuki Kiba and Shula Chen and Yafeng Chen and Tomoyuki Tanikawa and Cedric Thomas and Lee, {Chang Yong} and Lai, {Yi Chun} and Takuya Ozaki and Junichi Takayama and Ichiro Yamashita and Akihiro Murayama and Seiji Samukawa",

year = "2017",

month = jul,

day = "19",

doi = "10.1021/acsphotonics.7b00460",

language = "English",

volume = "4",

pages = "1851--1857",

journal = "ACS Photonics",

issn = "2330-4022",

publisher = "American Chemical Society",

number = "7",

}

TY - JOUR

T1 - Optical Study of Sub-10 nm In0.3Ga0.7N Quantum Nanodisks in GaN Nanopillars

AU - Higo, Akio

AU - Kiba, Takayuki

AU - Chen, Shula

AU - Chen, Yafeng

AU - Tanikawa, Tomoyuki

AU - Thomas, Cedric

AU - Lee, Chang Yong

AU - Lai, Yi Chun

AU - Ozaki, Takuya

AU - Takayama, Junichi

AU - Yamashita, Ichiro

AU - Murayama, Akihiro

AU - Samukawa, Seiji

PY - 2017/7/19

Y1 - 2017/7/19

N2 - We have demonstrated the fabrication of homogeneously distributed In0.3Ga0.7N/GaN quantum nanodisks (QNDs) with a high density and average diameter of 10 nm or less in 30-nm-high nanopillars. The scalable top-down nanofabrication process used biotemplates that were spin-coated on an In0.3Ga0.7N/GaN single quantum well (SQW) followed by low-damage dry etching on ferritins with 7 nm diameter iron cores. The photoluminescence measurements at 70 K showed a blue shift of quantum energy of 420 meV from the In0.3Ga0.7N/GaN SQW to the QND. The internal quantum efficiency of the In0.3Ga0.7N/GaN QND was 100 times that of the SQW. A significant reduction in the quantum-confined Stark effect in the QND structure was observed, which concurred with the numerical simulation using a 3D Schrödinger equation. These results pave the way for the fabrication of large-scale III-N quantum devices using nanoprocessing, which is vital for optoelectronic communication devices.

AB - We have demonstrated the fabrication of homogeneously distributed In0.3Ga0.7N/GaN quantum nanodisks (QNDs) with a high density and average diameter of 10 nm or less in 30-nm-high nanopillars. The scalable top-down nanofabrication process used biotemplates that were spin-coated on an In0.3Ga0.7N/GaN single quantum well (SQW) followed by low-damage dry etching on ferritins with 7 nm diameter iron cores. The photoluminescence measurements at 70 K showed a blue shift of quantum energy of 420 meV from the In0.3Ga0.7N/GaN SQW to the QND. The internal quantum efficiency of the In0.3Ga0.7N/GaN QND was 100 times that of the SQW. A significant reduction in the quantum-confined Stark effect in the QND structure was observed, which concurred with the numerical simulation using a 3D Schrödinger equation. These results pave the way for the fabrication of large-scale III-N quantum devices using nanoprocessing, which is vital for optoelectronic communication devices.

KW - III-N compound semiconductor

KW - photoluminescence

KW - quantum nanodisk

UR - http://www.scopus.com/inward/record.url?scp=85025079699&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85025079699&partnerID=8YFLogxK

U2 - 10.1021/acsphotonics.7b00460

DO - 10.1021/acsphotonics.7b00460

M3 - Article

AN - SCOPUS:85025079699

VL - 4

SP - 1851

EP - 1857

JO - ACS Photonics

JF - ACS Photonics

SN - 2330-4022

IS - 7

ER -