Optical study of high-biased AlGaN/GaN high-electron-mobility transistors

Naoteru Shigekawa, Kenji Shiojima, Tetsuya Suemitsu

Research output: Contribution to journalArticlepeer-review

74 Citations (Scopus)

Abstract

Microscopic electroluminescence (EL) and photoluminescence (PL) measurements of high-biased AlGaN/GaN high-electron-mobility transistors are reported. We observed that the EL intensity reveals peaks around the edge of the channel and the electron temperature there is higher than the electron temperature at the center of the channel. These EL features were found to be consistent with the change in the junction temperature, which we locally estimated by comparing the PL data with measurements in raised ambient temperatures.

Original languageEnglish
Pages (from-to)531-535
Number of pages5
JournalJournal of Applied Physics
Volume92
Issue number1
DOIs
Publication statusPublished - 2002 Jul 1
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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