Optical spectroscopy of bulk GaN crystals grown from a Na-Ga melt

B. J. Skromme; K. C. Palle; C. D. Poweleit; H. Yamane; M. Aoki; F. J. DiSalvo

doi:10.1063/1.1521575

Optical spectroscopy of bulk GaN crystals grown from a Na-Ga melt

B. J. Skromme, K. C. Palle, C. D. Poweleit, H. Yamane, M. Aoki, F. J. DiSalvo

Division of Inorganic Material Research

Research output: Contribution to journal › Article › peer-review

32 Citations (Scopus)

Abstract

A report on the optical spectroscopy of bulk gallium nitride crystals from Na-Ga melt was presented. The high purity was attributed to the low growth temperature and pressure. Low temperature excitonic photoluminescence (PL) and reflectance spectra was shown. The residual zinc implied that intentional zinc doping was possible and was used to make high resistivity material for microwave applications.

Original language	English
Pages (from-to)	3765-3767
Number of pages	3
Journal	Applied Physics Letters
Volume	81
Issue number	20
DOIs	https://doi.org/10.1063/1.1521575
Publication status	Published - 2002 Nov 11

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.1521575

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abstract = "A report on the optical spectroscopy of bulk gallium nitride crystals from Na-Ga melt was presented. The high purity was attributed to the low growth temperature and pressure. Low temperature excitonic photoluminescence (PL) and reflectance spectra was shown. The residual zinc implied that intentional zinc doping was possible and was used to make high resistivity material for microwave applications.",

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AU - Skromme, B. J.

AU - Palle, K. C.

AU - Poweleit, C. D.

AU - Yamane, H.

AU - Aoki, M.

AU - DiSalvo, F. J.

PY - 2002/11/11

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N2 - A report on the optical spectroscopy of bulk gallium nitride crystals from Na-Ga melt was presented. The high purity was attributed to the low growth temperature and pressure. Low temperature excitonic photoluminescence (PL) and reflectance spectra was shown. The residual zinc implied that intentional zinc doping was possible and was used to make high resistivity material for microwave applications.

AB - A report on the optical spectroscopy of bulk gallium nitride crystals from Na-Ga melt was presented. The high purity was attributed to the low growth temperature and pressure. Low temperature excitonic photoluminescence (PL) and reflectance spectra was shown. The residual zinc implied that intentional zinc doping was possible and was used to make high resistivity material for microwave applications.

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Optical spectroscopy of bulk GaN crystals grown from a Na-Ga melt

Abstract

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