Ga47In53As films have been grown by molecular beam epitaxy (MBE) on InP substrates. The unintentionally doped material has a free electron concentration of 8 × 1015cm-3 and exhibits sharp (~5 meV linewidth) exciton recombination in the 4K photoluminescence. The films were grown on (100) InP surfaces which were thermally cleaned in the arsenic beam. The effects of the substrate temperature during growth, the Ga to In flux ratio and the group V to group III flux ratio on the 4K photoluminescence are reported.
- Molecular Beam Epitaxy
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry