Optical quality GaInAs grown by molecular beam epitaxy

G. Wicks, C. E.C. Wood, H. Ohno, L. F. Eastman

Research output: Contribution to journalArticlepeer-review

17 Citations (Scopus)

Abstract

Ga47In53As films have been grown by molecular beam epitaxy (MBE) on InP substrates. The unintentionally doped material has a free electron concentration of 8 × 1015cm-3 and exhibits sharp (~5 meV linewidth) exciton recombination in the 4K photoluminescence. The films were grown on (100) InP surfaces which were thermally cleaned in the arsenic beam. The effects of the substrate temperature during growth, the Ga to In flux ratio and the group V to group III flux ratio on the 4K photoluminescence are reported.

Original languageEnglish
Pages (from-to)435-440
Number of pages6
JournalJournal of Electronic Materials
Volume11
Issue number2
DOIs
Publication statusPublished - 1982 Mar 1
Externally publishedYes

Keywords

  • GaInAs
  • Molecular Beam Epitaxy
  • Photoluminescence

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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