Optical quality GaInAs grown by molecular beam epitaxy

G. Wicks; C. E.C. Wood; H. Ohno; L. F. Eastman

doi:10.1007/BF02654681

Optical quality GaInAs grown by molecular beam epitaxy

G. Wicks, C. E.C. Wood, H. Ohno, L. F. Eastman

Research output: Contribution to journal › Article › peer-review

17 Citations (Scopus)

Abstract

Ga₄₇In₅₃As films have been grown by molecular beam epitaxy (MBE) on InP substrates. The unintentionally doped material has a free electron concentration of 8 × 10¹⁵cm^-3 and exhibits sharp (~5 meV linewidth) exciton recombination in the 4K photoluminescence. The films were grown on (100) InP surfaces which were thermally cleaned in the arsenic beam. The effects of the substrate temperature during growth, the Ga to In flux ratio and the group V to group III flux ratio on the 4K photoluminescence are reported.

Original language	English
Pages (from-to)	435-440
Number of pages	6
Journal	Journal of Electronic Materials
Volume	11
Issue number	2
DOIs	https://doi.org/10.1007/BF02654681
Publication status	Published - 1982 Mar 1
Externally published	Yes

Keywords

GaInAs
Molecular Beam Epitaxy
Photoluminescence

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1007/BF02654681

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title = "Optical quality GaInAs grown by molecular beam epitaxy",

abstract = "Ga47In53As films have been grown by molecular beam epitaxy (MBE) on InP substrates. The unintentionally doped material has a free electron concentration of 8 × 1015cm-3 and exhibits sharp (~5 meV linewidth) exciton recombination in the 4K photoluminescence. The films were grown on (100) InP surfaces which were thermally cleaned in the arsenic beam. The effects of the substrate temperature during growth, the Ga to In flux ratio and the group V to group III flux ratio on the 4K photoluminescence are reported.",

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T1 - Optical quality GaInAs grown by molecular beam epitaxy

AU - Wicks, G.

AU - Wood, C. E.C.

AU - Ohno, H.

AU - Eastman, L. F.

PY - 1982/3/1

Y1 - 1982/3/1

N2 - Ga47In53As films have been grown by molecular beam epitaxy (MBE) on InP substrates. The unintentionally doped material has a free electron concentration of 8 × 1015cm-3 and exhibits sharp (~5 meV linewidth) exciton recombination in the 4K photoluminescence. The films were grown on (100) InP surfaces which were thermally cleaned in the arsenic beam. The effects of the substrate temperature during growth, the Ga to In flux ratio and the group V to group III flux ratio on the 4K photoluminescence are reported.

AB - Ga47In53As films have been grown by molecular beam epitaxy (MBE) on InP substrates. The unintentionally doped material has a free electron concentration of 8 × 1015cm-3 and exhibits sharp (~5 meV linewidth) exciton recombination in the 4K photoluminescence. The films were grown on (100) InP surfaces which were thermally cleaned in the arsenic beam. The effects of the substrate temperature during growth, the Ga to In flux ratio and the group V to group III flux ratio on the 4K photoluminescence are reported.

KW - GaInAs

KW - Molecular Beam Epitaxy

KW - Photoluminescence

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