Optical properties of Si nanowires on a Si{111} surface

N. Ozaki, Y. Ohno, S. Takeda

Research output: Contribution to journalConference article

4 Citations (Scopus)

Abstract

We have investigated optical properties of straight silicon nanowires by means of in-situ cathodoluminescence spectroscopy in a transmission electron microscope. The nanowires, grown on a Si{111} surface via vapor-liquid-solid growth mechanism, have no structural defects such as kink, and the diameter and growth direction are controlled by varying the growth conditions. We have found that the nanowires emit intense light. These lines have not been observed in other kinds of Si nanostructures such as porous Si.

Original languageEnglish
Pages (from-to)99-103
Number of pages5
JournalMaterials Research Society Symposium - Proceedings
Volume588
Publication statusPublished - 2000
EventThe 1999 MRS Fall Meeting - Symposium P 'Optical Microstructural Characterization of Semiconductors' - Boston, MA, USA
Duration: 1999 Nov 291999 Nov 30

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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