Optical properties of nearly stacking-fault-free m -plane GaN homoepitaxial films grown by metal organic vapor phase epitaxy on low defect density freestanding GaN substrates

S. F. Chichibu, H. Yamaguchi, L. Zhao, M. Kubota, K. Okamoto, H. Ohta

Research output: Contribution to journalArticle

36 Citations (Scopus)

Abstract

Prospective optical properties were demonstrated for nearly stacking fault-free m -plane GaN homoepitaxial films grown by metal organic vapor phase epitaxy on the m -plane freestanding GaN substrates. Values of full width at half maximum of x-ray rocking curves were close to the substrate values being 31 arcsec for the (10 1- 0) diffraction with 〈0001〉 azimuth and 48 arcsec for the (10 1- 2) diffraction. Threading dislocation densities were lower than 5× 106 cm-2. The film surfaces exhibited atomically flat morphology with well-aligned monolayer steps. Lowerature photoluminescence (PL) spectra exhibited polarization-dependent well-resolved bound and free exciton emission lines, and a characteristic π (k⊥c,Ec) -polarized PL line was also observed. Roomerature effective PL lifetime of the free exciton peak increased with increasing supply ratio of ammonia to trimethylgallium, and a record long value for m -plane GaN (268 ps) was obtained.

Original languageEnglish
Article number091912
JournalApplied Physics Letters
Volume92
Issue number9
DOIs
Publication statusPublished - 2008 Mar 14

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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