Optical properties of narrow-bandgap dilute nitrides

Shigeyuki Kuboya, M. Kuroda, Q. T. Thieu, R. Katayama, K. Onabe

Research output: Chapter in Book/Report/Conference proceedingConference contribution


In this work, the detailed MOVPE growth properties of InAsN films with N contents up to 2.54% and the photoluminescence properties in relation with the carrier concentrations were investigated. For the MOVPE growth, tertiary-butylarsine (TBAs) and 1,1-dimethylhydrazine (DMHy) were used as the group-V precursors. The efficient growth conditions for the InAsN films with higher N contents are a higher DMHy/V ratio and a lower As/In ratio. The photoluminescence emission from the post-annealed InAsN films exhibits a blue-shift with increasing the N content, which is contrary to the expected bandgap bowing. The same blue-shift behavior was observed in InAsN films grown on SI-GaAs(001) substrate by RF-MBE. As a result of temperature dependent photoluminescence measurements under various excitation powers, it was found that the blue-shift of the PL-peak energy of the InAsN films was attributed to the band-filling effect due to the degenerate electrons induced by the N incorporation.

Original languageEnglish
Title of host publicationQuantum Sensing and Nanophotonic Devices VIII
Publication statusPublished - 2011 May 13
Externally publishedYes
EventQuantum Sensing and Nanophotonic Devices VIII - San Francisco, CA, United States
Duration: 2011 Jan 232011 Jan 27

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
ISSN (Print)0277-786X


OtherQuantum Sensing and Nanophotonic Devices VIII
Country/TerritoryUnited States
CitySan Francisco, CA


  • RF-MBE
  • band-filling
  • dilute nitrides
  • photoluminescence

ASJC Scopus subject areas

  • Applied Mathematics
  • Computer Science Applications
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics


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