In this work, the detailed MOVPE growth properties of InAsN films with N contents up to 2.54% and the photoluminescence properties in relation with the carrier concentrations were investigated. For the MOVPE growth, tertiary-butylarsine (TBAs) and 1,1-dimethylhydrazine (DMHy) were used as the group-V precursors. The efficient growth conditions for the InAsN films with higher N contents are a higher DMHy/V ratio and a lower As/In ratio. The photoluminescence emission from the post-annealed InAsN films exhibits a blue-shift with increasing the N content, which is contrary to the expected bandgap bowing. The same blue-shift behavior was observed in InAsN films grown on SI-GaAs(001) substrate by RF-MBE. As a result of temperature dependent photoluminescence measurements under various excitation powers, it was found that the blue-shift of the PL-peak energy of the InAsN films was attributed to the band-filling effect due to the degenerate electrons induced by the N incorporation.