Optical properties of fresh dislocations in GaN

I. Yonenaga, Y. Ohno, T. Taishi, Y. Tokumoto, H. Makino, T. Yao, Y. Kamimura, K. Edagawa

Research output: Contribution to journalArticlepeer-review

12 Citations (Scopus)


Optical properties of fresh dislocations, (a/3)[1 1 2̄ 0]-type edge dislocations on the (1 1̄ 0 0) prismatic plane, introduced into GaN by plastic deformation at elevated temperatures were investigated by photoluminescence and optical absorption measurements. Plastic deformation acts as an effective passivation, leading to remarkable reduction of near-band-edge photoluminescence intensity centered at 3.48 eV and noticeable red-shift of the optical absorption edge. In a model of the FranzKeldysh effect, the induced edge dislocations posses nonradiative trap sites around 3e/c along their core, resulting in the reduction of free-carrier concentration. Also, the induced dislocations give rise to some luminescence peaks in the energy range 1.72.4 eV, differing from the yellow luminescence, which implies the formation of radiative recombination centers by the dislocations.

Original languageEnglish
Pages (from-to)415-417
Number of pages3
JournalJournal of Crystal Growth
Issue number1
Publication statusPublished - 2011 Mar 1


  • A1. Defects
  • A1. Line defects
  • A1. Optical absorption
  • A1. Photoluminescence
  • A2. Hydride vapor phase epitaxy
  • B2. Nitrides

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry


Dive into the research topics of 'Optical properties of fresh dislocations in GaN'. Together they form a unique fingerprint.

Cite this