TY - JOUR
T1 - Optical properties of edge dislocations on (11̄00) prismatic planes in wurtzite ZnO introduced at elevated temperatures
AU - Ohno, Y.
AU - Tokumoto, Y.
AU - Yonenaga, I.
AU - Fujii, K.
AU - Yao, T.
N1 - Funding Information:
This work was partially supported by the Ministry of Education, Culture, Sports, Science, and Technology, Japan, a Grant-in-Aid for Scientific Research on Priority Area, No. 21016002 (2009-2011).
PY - 2012/6/1
Y1 - 2012/6/1
N2 - An arbitrary number (3 × 10 8 - 1 × 10 10 cm -2) of edge dislocations on (11̄00) prismatic planes, with the Burgers vector of (a/3) [112̄0] and with the dislocation lines nearly parallel to [0001], were introduced intentionally in wurtzite ZnO bulk single crystals at elevated temperatures of 923-1073 K, and the optical properties were examined. After the introduction of the dislocations, the intensity of the intrinsic emissions existing in pre-dislocated crystals, i.e., near-band edge emissions and deep level emissions, was almost unchanged, and donor-acceptor pair (DAP) emissions with photon energies of 2.20 and 2.50 eV at temperature of 12 K appeared. The intensity of the DAP emissions increased with increasing the dislocation density. The origin of the DAP emissions was determined as acceptor levels of 0.9 and 1.2 eV depth introduced with the dislocations.
AB - An arbitrary number (3 × 10 8 - 1 × 10 10 cm -2) of edge dislocations on (11̄00) prismatic planes, with the Burgers vector of (a/3) [112̄0] and with the dislocation lines nearly parallel to [0001], were introduced intentionally in wurtzite ZnO bulk single crystals at elevated temperatures of 923-1073 K, and the optical properties were examined. After the introduction of the dislocations, the intensity of the intrinsic emissions existing in pre-dislocated crystals, i.e., near-band edge emissions and deep level emissions, was almost unchanged, and donor-acceptor pair (DAP) emissions with photon energies of 2.20 and 2.50 eV at temperature of 12 K appeared. The intensity of the DAP emissions increased with increasing the dislocation density. The origin of the DAP emissions was determined as acceptor levels of 0.9 and 1.2 eV depth introduced with the dislocations.
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U2 - 10.1063/1.4725426
DO - 10.1063/1.4725426
M3 - Article
AN - SCOPUS:84863308436
VL - 111
JO - Journal of Applied Physics
JF - Journal of Applied Physics
SN - 0021-8979
IS - 11
M1 - 113514
ER -