Optical properties of CuGaSe2 and CuAlSe2 layers epitaxially grown on Cu(In0.04Ga0.96)Se2 substrates

Sho Shirakata, Shigefusa Chichibu, Hideto Miyake, Kohichi Sugiyama

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15 Citations (Scopus)


Photoluminescence (PL) study has been performed on epitaxial layers of CuGaSe2 and CuAlSe2 grown by metaiorganic chemical vapor epitaxy on CuGa0.96In0.04Se2 substrates prepared by the traveling heater method. PL properties of epilayers are compared with each other for those grown on GaAs (100), CuGa0.96In0.04Se2(100), CuGa0.96In0.04Se2 (112), and randomly oriented CuGa0.96In0.04Se2 substrates. PL results are discussed in terms of the lattice mismatches and stress in the epilayers.

Original languageEnglish
Pages (from-to)7294-7302
Number of pages9
JournalJournal of Applied Physics
Issue number10
Publication statusPublished - 2000 May 15
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy(all)


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