Optical properties of (1-101) InGaN/GaN MQW stripe laser structure on Si substrate

Tasuku Murase, Tomoyuki Tanikawa, Yoshio Honda, Masahito Yamaguchi, Hiroshi Amano

Research output: Contribution to journalArticlepeer-review

13 Citations (Scopus)


A smooth laser structure on (1-101) GaN microstripes was successfully fabricated on a patterned (100) 8°-off Si substrate. The sample has a high internal quantum efficiency (IQE) compared with blue LEDs on a sapphire substrate. The high-density excitation PL spectrum observed from the cross section of the sample shows marked narrowing, and the integral PL intensity also shows a steep increase. These results indicate the onset of stimulated emission from an InGaN-based multi quantum well (MQW) active layer on (1-101) GaN / (100) Si. To the best of our knowledge, this is the first report of the observation of a stimulated emission from a (1-101) MQW on a Si substrate. We succeeded in fabricating and verifying the high-quality laser structure on semipolar (1-101) GaN on a Si substrate.

Original languageEnglish
Pages (from-to)2160-2162
Number of pages3
JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
Issue number7-8
Publication statusPublished - 2011 Jul


  • GaN
  • InGaN
  • Nitride
  • Semipolar
  • Si
  • Stimulated emission

ASJC Scopus subject areas

  • Condensed Matter Physics


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