Optical properties of (1 1̄ 0 1) semi-polar InGaN/GaN multiple quantum wells grown on patterned silicon substrates

Ching Hsueh Chiu, Da Wei Lin, Chien Chung Lin, Zhen Yu Li, Yi Chen Chen, Shih Chun Ling, Hao Chung Kuo, Tien Chang Lu, Shing Chung Wang, Wei Tsai Liao, Tomoyuki Tanikawa, Yoshio Honda, Masahito Yamaguchi, Nobuhiko Sawaki

Research output: Contribution to journalArticle

15 Citations (Scopus)

Abstract

We present a study of high quality (1 1̄ 0 1) GaN films and the InGaN/GaN multiple quantum wells (MQWs) using epitaxial lateral overgrowth (ELO) technique by atmospheric pressure metal organic chemical vapor deposition (MOCVD). The smooth coalescence of the stripes and surface morphology was measured by scanning electron microscope (SEM) and atomic force microscopy (AFM). Due to reduction in internal electric field, semipolar InGaN/GaN MQWs have higher radiative recombination rate from time-resolved photoluminescence (TRPL) measurement. In addition, from degree of polarization (DOP) measurement, we observed higher polarization ratio attributed to the induced anisotropic compressive strain.

Original languageEnglish
Pages (from-to)500-504
Number of pages5
JournalJournal of Crystal Growth
Volume318
Issue number1
DOIs
Publication statusPublished - 2011 Mar 1

Keywords

  • A3. Metalorganic chemical vapor deposition
  • A3. Quantum wells
  • B1. Nitride
  • B2. Semiconductor IIIV materials
  • B3. Light emitting diode

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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    Chiu, C. H., Lin, D. W., Lin, C. C., Li, Z. Y., Chen, Y. C., Ling, S. C., Kuo, H. C., Lu, T. C., Wang, S. C., Liao, W. T., Tanikawa, T., Honda, Y., Yamaguchi, M., & Sawaki, N. (2011). Optical properties of (1 1̄ 0 1) semi-polar InGaN/GaN multiple quantum wells grown on patterned silicon substrates. Journal of Crystal Growth, 318(1), 500-504. https://doi.org/10.1016/j.jcrysgro.2010.10.054