Optical properties of (1 1̄ 0 1) semi-polar InGaN/GaN multiple quantum wells grown on patterned silicon substrates

Ching Hsueh Chiu; Da Wei Lin; Chien Chung Lin; Zhen Yu Li; Yi Chen Chen; Shih Chun Ling; Hao Chung Kuo; Tien Chang Lu; Shing Chung Wang; Wei Tsai Liao; Tomoyuki Tanikawa; Yoshio Honda; Masahito Yamaguchi; Nobuhiko Sawaki

doi:10.1016/j.jcrysgro.2010.10.054

Optical properties of (1 1̄ 0 1) semi-polar InGaN/GaN multiple quantum wells grown on patterned silicon substrates

Ching Hsueh Chiu, Da Wei Lin, Chien Chung Lin, Zhen Yu Li, Yi Chen Chen, Shih Chun Ling, Hao Chung Kuo, Tien Chang Lu, Shing Chung Wang, Wei Tsai Liao, Tomoyuki Tanikawa, Yoshio Honda, Masahito Yamaguchi, Nobuhiko Sawaki

Materials Design Division

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16 Citations (Scopus)

Abstract

We present a study of high quality (1 1̄ 0 1) GaN films and the InGaN/GaN multiple quantum wells (MQWs) using epitaxial lateral overgrowth (ELO) technique by atmospheric pressure metal organic chemical vapor deposition (MOCVD). The smooth coalescence of the stripes and surface morphology was measured by scanning electron microscope (SEM) and atomic force microscopy (AFM). Due to reduction in internal electric field, semipolar InGaN/GaN MQWs have higher radiative recombination rate from time-resolved photoluminescence (TRPL) measurement. In addition, from degree of polarization (DOP) measurement, we observed higher polarization ratio attributed to the induced anisotropic compressive strain.

Original language	English
Pages (from-to)	500-504
Number of pages	5
Journal	Journal of Crystal Growth
Volume	318
Issue number	1
DOIs	https://doi.org/10.1016/j.jcrysgro.2010.10.054
Publication status	Published - 2011 Mar 1

Keywords

A3. Metalorganic chemical vapor deposition
A3. Quantum wells
B1. Nitride
B2. Semiconductor IIIV materials
B3. Light emitting diode

ASJC Scopus subject areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

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10.1016/j.jcrysgro.2010.10.054

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Chiu, C. H., Lin, D. W., Lin, C. C., Li, Z. Y., Chen, Y. C., Ling, S. C., Kuo, H. C., Lu, T. C., Wang, S. C., Liao, W. T., Tanikawa, T., Honda, Y., Yamaguchi, M., & Sawaki, N. (2011). Optical properties of (1 1̄ 0 1) semi-polar InGaN/GaN multiple quantum wells grown on patterned silicon substrates. Journal of Crystal Growth, 318(1), 500-504. https://doi.org/10.1016/j.jcrysgro.2010.10.054

Optical properties of (1 1̄ 0 1) semi-polar InGaN/GaN multiple quantum wells grown on patterned silicon substrates. / Chiu, Ching Hsueh; Lin, Da Wei; Lin, Chien Chung; Li, Zhen Yu; Chen, Yi Chen; Ling, Shih Chun; Kuo, Hao Chung; Lu, Tien Chang; Wang, Shing Chung; Liao, Wei Tsai; Tanikawa, Tomoyuki; Honda, Yoshio; Yamaguchi, Masahito; Sawaki, Nobuhiko.

In: Journal of Crystal Growth, Vol. 318, No. 1, 01.03.2011, p. 500-504.

Research output: Contribution to journal › Article › peer-review

Chiu, Ching Hsueh ; Lin, Da Wei ; Lin, Chien Chung ; Li, Zhen Yu ; Chen, Yi Chen ; Ling, Shih Chun ; Kuo, Hao Chung ; Lu, Tien Chang ; Wang, Shing Chung ; Liao, Wei Tsai ; Tanikawa, Tomoyuki ; Honda, Yoshio ; Yamaguchi, Masahito ; Sawaki, Nobuhiko. / Optical properties of (1 1̄ 0 1) semi-polar InGaN/GaN multiple quantum wells grown on patterned silicon substrates. In: Journal of Crystal Growth. 2011 ; Vol. 318, No. 1. pp. 500-504.

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title = "Optical properties of (1 {\=1} 0 1) semi-polar InGaN/GaN multiple quantum wells grown on patterned silicon substrates",

abstract = "We present a study of high quality (1 {\=1} 0 1) GaN films and the InGaN/GaN multiple quantum wells (MQWs) using epitaxial lateral overgrowth (ELO) technique by atmospheric pressure metal organic chemical vapor deposition (MOCVD). The smooth coalescence of the stripes and surface morphology was measured by scanning electron microscope (SEM) and atomic force microscopy (AFM). Due to reduction in internal electric field, semipolar InGaN/GaN MQWs have higher radiative recombination rate from time-resolved photoluminescence (TRPL) measurement. In addition, from degree of polarization (DOP) measurement, we observed higher polarization ratio attributed to the induced anisotropic compressive strain.",

keywords = "A3. Metalorganic chemical vapor deposition, A3. Quantum wells, B1. Nitride, B2. Semiconductor IIIV materials, B3. Light emitting diode",

author = "Chiu, {Ching Hsueh} and Lin, {Da Wei} and Lin, {Chien Chung} and Li, {Zhen Yu} and Chen, {Yi Chen} and Ling, {Shih Chun} and Kuo, {Hao Chung} and Lu, {Tien Chang} and Wang, {Shing Chung} and Liao, {Wei Tsai} and Tomoyuki Tanikawa and Yoshio Honda and Masahito Yamaguchi and Nobuhiko Sawaki",

note = "Funding Information: The authors are grateful to the National Science Council of the Republic of China, Taiwan , for financially supporting this research under Contract No. NSC 98-2923-E-009-001-MY3 .",

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doi = "10.1016/j.jcrysgro.2010.10.054",

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AU - Lin, Da Wei

AU - Lin, Chien Chung

AU - Li, Zhen Yu

AU - Chen, Yi Chen

AU - Ling, Shih Chun

AU - Kuo, Hao Chung

AU - Lu, Tien Chang

AU - Wang, Shing Chung

AU - Liao, Wei Tsai

AU - Tanikawa, Tomoyuki

AU - Honda, Yoshio

AU - Yamaguchi, Masahito

AU - Sawaki, Nobuhiko

N1 - Funding Information: The authors are grateful to the National Science Council of the Republic of China, Taiwan , for financially supporting this research under Contract No. NSC 98-2923-E-009-001-MY3 .

PY - 2011/3/1

Y1 - 2011/3/1

N2 - We present a study of high quality (1 1̄ 0 1) GaN films and the InGaN/GaN multiple quantum wells (MQWs) using epitaxial lateral overgrowth (ELO) technique by atmospheric pressure metal organic chemical vapor deposition (MOCVD). The smooth coalescence of the stripes and surface morphology was measured by scanning electron microscope (SEM) and atomic force microscopy (AFM). Due to reduction in internal electric field, semipolar InGaN/GaN MQWs have higher radiative recombination rate from time-resolved photoluminescence (TRPL) measurement. In addition, from degree of polarization (DOP) measurement, we observed higher polarization ratio attributed to the induced anisotropic compressive strain.

AB - We present a study of high quality (1 1̄ 0 1) GaN films and the InGaN/GaN multiple quantum wells (MQWs) using epitaxial lateral overgrowth (ELO) technique by atmospheric pressure metal organic chemical vapor deposition (MOCVD). The smooth coalescence of the stripes and surface morphology was measured by scanning electron microscope (SEM) and atomic force microscopy (AFM). Due to reduction in internal electric field, semipolar InGaN/GaN MQWs have higher radiative recombination rate from time-resolved photoluminescence (TRPL) measurement. In addition, from degree of polarization (DOP) measurement, we observed higher polarization ratio attributed to the induced anisotropic compressive strain.

KW - A3. Metalorganic chemical vapor deposition

KW - A3. Quantum wells

KW - B1. Nitride

KW - B2. Semiconductor IIIV materials

KW - B3. Light emitting diode

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Optical properties of (1 1̄ 0 1) semi-polar InGaN/GaN multiple quantum wells grown on patterned silicon substrates

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Keywords

ASJC Scopus subject areas

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