Abstract
We present a study of high quality (1 1̄ 0 1) GaN films and the InGaN/GaN multiple quantum wells (MQWs) using epitaxial lateral overgrowth (ELO) technique by atmospheric pressure metal organic chemical vapor deposition (MOCVD). The smooth coalescence of the stripes and surface morphology was measured by scanning electron microscope (SEM) and atomic force microscopy (AFM). Due to reduction in internal electric field, semipolar InGaN/GaN MQWs have higher radiative recombination rate from time-resolved photoluminescence (TRPL) measurement. In addition, from degree of polarization (DOP) measurement, we observed higher polarization ratio attributed to the induced anisotropic compressive strain.
Original language | English |
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Pages (from-to) | 500-504 |
Number of pages | 5 |
Journal | Journal of Crystal Growth |
Volume | 318 |
Issue number | 1 |
DOIs | |
Publication status | Published - 2011 Mar 1 |
Keywords
- A3. Metalorganic chemical vapor deposition
- A3. Quantum wells
- B1. Nitride
- B2. Semiconductor IIIV materials
- B3. Light emitting diode
ASJC Scopus subject areas
- Condensed Matter Physics
- Inorganic Chemistry
- Materials Chemistry