Optical properties and electrical properties of heavily Al-doped ZnSe layers

D. C. Oh, T. Takai, I. H. Im, S. H. Park, T. Hanada, T. Yao, J. S. Song, J. H. Chang, H. Makino, C. S. Han, K. H. Koo

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)

Abstract

We have investigated optical properties and electrical properties of electrically degraded ZnSe layers by heavy Al doping, where their electron concentrations lie in the range of 7× 1017 -6× 1018 cm-3. Low-temperature photoluminescence exhibits two dominant radiative trap centers of 1.97 eV (RD1) and 2.25 eV (RD2), which are ascribed to VZn -related complex defects. Deep-level-transient spectroscopy shows two electron-trap centers at 0.16 eV (ND1) and 0.80 eV (ND2) below the conduction-band minimum. On the other hand, it is found that RD2 is dominant in relatively lightly doped ZnSe:Al layers below 7× 1018 cm-3 and RD1 is dominant in more heavily doped layers near 1× 1019 cm-3, while ND1 and ND2 are independent of Al doping concentration and their trap densities are estimated be below 3× 1016 cm-3. This indicates that RD1 and RD2 cause the carrier compensation in heavily doped ZnSe:Al layers. Their electron transport mechanism can be explained by ionized-impurity scattering mechanism.

Original languageEnglish
Pages (from-to)259-264
Number of pages6
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume26
Issue number2
DOIs
Publication statusPublished - 2008 Mar 10

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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