Optical properties and electrical properties of heavily Al-doped ZnSe layers

D. C. Oh; T. Takai; I. H. Im; S. H. Park; T. Hanada; T. Yao; J. S. Song; J. H. Chang; H. Makino; C. S. Han; K. H. Koo

doi:10.1116/1.2836404

Optical properties and electrical properties of heavily Al-doped ZnSe layers

D. C. Oh, T. Takai, I. H. Im, S. H. Park, T. Hanada, T. Yao, J. S. Song, J. H. Chang, H. Makino, C. S. Han, K. H. Koo

Materials Design Division

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1 Citation (Scopus)

Abstract

We have investigated optical properties and electrical properties of electrically degraded ZnSe layers by heavy Al doping, where their electron concentrations lie in the range of 7× 1017 -6× 1018 cm-3. Low-temperature photoluminescence exhibits two dominant radiative trap centers of 1.97 eV (RD1) and 2.25 eV (RD2), which are ascribed to VZn -related complex defects. Deep-level-transient spectroscopy shows two electron-trap centers at 0.16 eV (ND1) and 0.80 eV (ND2) below the conduction-band minimum. On the other hand, it is found that RD2 is dominant in relatively lightly doped ZnSe:Al layers below 7× 1018 cm-3 and RD1 is dominant in more heavily doped layers near 1× 1019 cm-3, while ND1 and ND2 are independent of Al doping concentration and their trap densities are estimated be below 3× 1016 cm-3. This indicates that RD1 and RD2 cause the carrier compensation in heavily doped ZnSe:Al layers. Their electron transport mechanism can be explained by ionized-impurity scattering mechanism.

Original language	English
Pages (from-to)	259-264
Number of pages	6
Journal	Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume	26
Issue number	2
DOIs	https://doi.org/10.1116/1.2836404
Publication status	Published - 2008

ASJC Scopus subject areas

Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films

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Optical properties and electrical properties of heavily Al-doped ZnSe layers. / Oh, D. C.; Takai, T.; Im, I. H.; Park, S. H.; Hanada, T.; Yao, T.; Song, J. S.; Chang, J. H.; Makino, H.; Han, C. S.; Koo, K. H.

In: Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, Vol. 26, No. 2, 2008, p. 259-264.

Research output: Contribution to journal › Article › peer-review

@article{d73990d4938145b48528f6eb3c44ce64,

title = "Optical properties and electrical properties of heavily Al-doped ZnSe layers",

abstract = "We have investigated optical properties and electrical properties of electrically degraded ZnSe layers by heavy Al doping, where their electron concentrations lie in the range of 7× 1017 -6× 1018 cm-3. Low-temperature photoluminescence exhibits two dominant radiative trap centers of 1.97 eV (RD1) and 2.25 eV (RD2), which are ascribed to VZn -related complex defects. Deep-level-transient spectroscopy shows two electron-trap centers at 0.16 eV (ND1) and 0.80 eV (ND2) below the conduction-band minimum. On the other hand, it is found that RD2 is dominant in relatively lightly doped ZnSe:Al layers below 7× 1018 cm-3 and RD1 is dominant in more heavily doped layers near 1× 1019 cm-3, while ND1 and ND2 are independent of Al doping concentration and their trap densities are estimated be below 3× 1016 cm-3. This indicates that RD1 and RD2 cause the carrier compensation in heavily doped ZnSe:Al layers. Their electron transport mechanism can be explained by ionized-impurity scattering mechanism.",

author = "Oh, {D. C.} and T. Takai and Im, {I. H.} and Park, {S. H.} and T. Hanada and T. Yao and Song, {J. S.} and Chang, {J. H.} and H. Makino and Han, {C. S.} and Koo, {K. H.}",

note = "Funding Information: This work was supported by the Korean Research Foundation Grant funded by the Korean Government (MOEHRD, Basic Research Promotion Fund) (KRF-2006-003-D00318) and the Academic Research Fund of Hoseo University in 20060134.",

year = "2008",

doi = "10.1116/1.2836404",

language = "English",

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pages = "259--264",

journal = "Journal of Vacuum Science and Technology A",

issn = "0734-2101",

publisher = "AVS Science and Technology Society",

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TY - JOUR

T1 - Optical properties and electrical properties of heavily Al-doped ZnSe layers

AU - Oh, D. C.

AU - Takai, T.

AU - Im, I. H.

AU - Park, S. H.

AU - Hanada, T.

AU - Yao, T.

AU - Song, J. S.

AU - Chang, J. H.

AU - Makino, H.

AU - Han, C. S.

AU - Koo, K. H.

N1 - Funding Information: This work was supported by the Korean Research Foundation Grant funded by the Korean Government (MOEHRD, Basic Research Promotion Fund) (KRF-2006-003-D00318) and the Academic Research Fund of Hoseo University in 20060134.

PY - 2008

Y1 - 2008

N2 - We have investigated optical properties and electrical properties of electrically degraded ZnSe layers by heavy Al doping, where their electron concentrations lie in the range of 7× 1017 -6× 1018 cm-3. Low-temperature photoluminescence exhibits two dominant radiative trap centers of 1.97 eV (RD1) and 2.25 eV (RD2), which are ascribed to VZn -related complex defects. Deep-level-transient spectroscopy shows two electron-trap centers at 0.16 eV (ND1) and 0.80 eV (ND2) below the conduction-band minimum. On the other hand, it is found that RD2 is dominant in relatively lightly doped ZnSe:Al layers below 7× 1018 cm-3 and RD1 is dominant in more heavily doped layers near 1× 1019 cm-3, while ND1 and ND2 are independent of Al doping concentration and their trap densities are estimated be below 3× 1016 cm-3. This indicates that RD1 and RD2 cause the carrier compensation in heavily doped ZnSe:Al layers. Their electron transport mechanism can be explained by ionized-impurity scattering mechanism.

AB - We have investigated optical properties and electrical properties of electrically degraded ZnSe layers by heavy Al doping, where their electron concentrations lie in the range of 7× 1017 -6× 1018 cm-3. Low-temperature photoluminescence exhibits two dominant radiative trap centers of 1.97 eV (RD1) and 2.25 eV (RD2), which are ascribed to VZn -related complex defects. Deep-level-transient spectroscopy shows two electron-trap centers at 0.16 eV (ND1) and 0.80 eV (ND2) below the conduction-band minimum. On the other hand, it is found that RD2 is dominant in relatively lightly doped ZnSe:Al layers below 7× 1018 cm-3 and RD1 is dominant in more heavily doped layers near 1× 1019 cm-3, while ND1 and ND2 are independent of Al doping concentration and their trap densities are estimated be below 3× 1016 cm-3. This indicates that RD1 and RD2 cause the carrier compensation in heavily doped ZnSe:Al layers. Their electron transport mechanism can be explained by ionized-impurity scattering mechanism.

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Optical properties and electrical properties of heavily Al-doped ZnSe layers

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