Optical properties and carrier dynamics in asymmetric coupled ingan multiple quantum wells

Guo En Weng, Bao Ping Zhang, Ming Ming Liang, Xue Qin Lv, Jiang Yong Zhang, Lei Ying Ying, Zhi Ren Qiu, H. Yaguchi, S. Kuboya, K. Onabe, Shao Qiang Chen, H. Akiyama

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)

Abstract

Optical properties and carrier dynamics of InGaN/GaN asymmetric coupled quantum wells (ACQWs) are studied by excitation-power-dependent photoluminescence (PL), photoreflectance (PR) and time-resolved PL (TRPL) experiments. Under weak excitations, only the emission from the widest well is observed due to the tunneling from narrower to wider wells. Under strong excitations, the carrier distribution becomes more uniform and an enhanced emission from the mid well (2.5 nm well) is observed. Dependence of the PL intensity on excitation power is well explained by a rate equation model. The energy levels in the ACQW structure are clearly revealed by PR measurements and are in good agreement with calculations. Our results indicate that the enhanced emission from the mid well is ascribed to «reverse tunneling» from 3.0 to 2.5 nm well, which is confirmed by TRPL experiments.

Original languageEnglish
Article number1350021
JournalFunctional Materials Letters
Volume6
Issue number2
DOIs
Publication statusPublished - 2013 Apr

Keywords

  • InGaN
  • asymmetric coupled quantum wells
  • carrier dynamics
  • transition energy

ASJC Scopus subject areas

  • Materials Science(all)

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