Optical modulator using metal-oxide-semiconductor type Si ring resonator

Yoshiteru Amemiya, Tomohiro Tokunaga, Yuichiro Tanushi, Shin Yokoyama

Research output: Contribution to journalArticlepeer-review

10 Citations (Scopus)


Electric-field drive optical modulators using a Si ring resonator were fabricated on silicon-on-insulator (SOI) wafers. The fabricated resonators consisted of Si waveguides with width and thickness of 1.0 and 0.3 μm, respectively. In order to induce the linear electro-optic (EO) effect in the Si core layer, the strain was applied by covering the layer with Si 3N4 film (0.26 μm thick) deposited by low pressure chemical vapor deposition (LPCVD) at 750 °C. The vertical electric-field was applied to the Si waveguide through the top and bottom cladding layers, and the optical output from the drop port at the resonance wavelength was measured. At a wavelength of 1501.6 nm, the optical modulation of 33% was obtained at 200V (electric-field at the silicon surface 3 × 105 V/cm, nearly the breakdown field). The resonance wavelength was shifted toward the short wavelength side by applying both positive and negative voltages, this shift was explained by carrier concentration modulation. The linear EO effect in the Si core layer was not observed, presumably because the strain in the Si core layer was too small.

Original languageEnglish
Pages (from-to)247-251
Number of pages5
JournalOptical Review
Issue number3
Publication statusPublished - 2009 May 1


  • Carrier concentration modulation
  • Electric-field drive
  • Electro-optic effect
  • Optical interconnection
  • Optical modulator
  • Si ring resonator

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics


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