Optical investigation of growth mode of Ge thin films on Si(110) substrates

J. Arai; A. Ohga; Takeo Hattori; N. Usami; Y. Shiraki

doi:10.1063/1.119645

Optical investigation of growth mode of Ge thin films on Si(110) substrates

J. Arai, A. Ohga, Takeo Hattori, N. Usami, Y. Shiraki

Research output: Contribution to journal › Article › peer-review

13 Citations (Scopus)

Abstract

A unique growth mode of Ge on Si(110) substrates was clarified by photoluminescence (PL) spectroscopy. A spectral redshift and an increase of the relative no-phonon intensity were found for PL from the two-dimensional Ge layer on Si(110) compared to that on Si(100). These results likely arise from nonuniformity in the Ge layer thickness owing to the step-bunched Si(110) surface and resultant exciton localization. The two-dimensional to three-dimensional growth mode changeover was observed as evidenced by emergence of broad PL from Ge islands. In contrast to Ge on Si(100) PL from the wetting layer was found to show continuous redshift with increasing Ge coverage even after Ge island formation.

Original language	English
Pages (from-to)	785-787
Number of pages	3
Journal	Applied Physics Letters
Volume	71
Issue number	6
DOIs	https://doi.org/10.1063/1.119645
Publication status	Published - 1997 Aug 11

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Optical investigation of growth mode of Ge thin films on Si(110) substrates",

abstract = "A unique growth mode of Ge on Si(110) substrates was clarified by photoluminescence (PL) spectroscopy. A spectral redshift and an increase of the relative no-phonon intensity were found for PL from the two-dimensional Ge layer on Si(110) compared to that on Si(100). These results likely arise from nonuniformity in the Ge layer thickness owing to the step-bunched Si(110) surface and resultant exciton localization. The two-dimensional to three-dimensional growth mode changeover was observed as evidenced by emergence of broad PL from Ge islands. In contrast to Ge on Si(100) PL from the wetting layer was found to show continuous redshift with increasing Ge coverage even after Ge island formation.",

author = "J. Arai and A. Ohga and Takeo Hattori and N. Usami and Y. Shiraki",

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T1 - Optical investigation of growth mode of Ge thin films on Si(110) substrates

AU - Arai, J.

AU - Ohga, A.

AU - Hattori, Takeo

AU - Usami, N.

AU - Shiraki, Y.

PY - 1997/8/11

Y1 - 1997/8/11

N2 - A unique growth mode of Ge on Si(110) substrates was clarified by photoluminescence (PL) spectroscopy. A spectral redshift and an increase of the relative no-phonon intensity were found for PL from the two-dimensional Ge layer on Si(110) compared to that on Si(100). These results likely arise from nonuniformity in the Ge layer thickness owing to the step-bunched Si(110) surface and resultant exciton localization. The two-dimensional to three-dimensional growth mode changeover was observed as evidenced by emergence of broad PL from Ge islands. In contrast to Ge on Si(100) PL from the wetting layer was found to show continuous redshift with increasing Ge coverage even after Ge island formation.

AB - A unique growth mode of Ge on Si(110) substrates was clarified by photoluminescence (PL) spectroscopy. A spectral redshift and an increase of the relative no-phonon intensity were found for PL from the two-dimensional Ge layer on Si(110) compared to that on Si(100). These results likely arise from nonuniformity in the Ge layer thickness owing to the step-bunched Si(110) surface and resultant exciton localization. The two-dimensional to three-dimensional growth mode changeover was observed as evidenced by emergence of broad PL from Ge islands. In contrast to Ge on Si(100) PL from the wetting layer was found to show continuous redshift with increasing Ge coverage even after Ge island formation.

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