Optical investigation of growth mode of Ge thin films on Si(110) substrates

J. Arai, A. Ohga, Takeo Hattori, N. Usami, Y. Shiraki

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    13 Citations (Scopus)

    Abstract

    A unique growth mode of Ge on Si(110) substrates was clarified by photoluminescence (PL) spectroscopy. A spectral redshift and an increase of the relative no-phonon intensity were found for PL from the two-dimensional Ge layer on Si(110) compared to that on Si(100). These results likely arise from nonuniformity in the Ge layer thickness owing to the step-bunched Si(110) surface and resultant exciton localization. The two-dimensional to three-dimensional growth mode changeover was observed as evidenced by emergence of broad PL from Ge islands. In contrast to Ge on Si(100) PL from the wetting layer was found to show continuous redshift with increasing Ge coverage even after Ge island formation.

    Original languageEnglish
    Pages (from-to)785-787
    Number of pages3
    JournalApplied Physics Letters
    Volume71
    Issue number6
    DOIs
    Publication statusPublished - 1997 Aug 11

    ASJC Scopus subject areas

    • Physics and Astronomy (miscellaneous)

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