Optical detection of zero-field spin precession of high mobility two-dimensional electron gas in a gated GaAs/AlGaAs quantum well

T. Takahashi; S. Matsuzaka; Y. Ohno; H. Ohno

doi:10.1016/j.physe.2010.03.026

Optical detection of zero-field spin precession of high mobility two-dimensional electron gas in a gated GaAs/AlGaAs quantum well

T. Takahashi, S. Matsuzaka, Y. Ohno, H. Ohno

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Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

We investigated the effective magnetic field induced by spinorbit interaction in a gated modulation-doped GaAs/AlGaAs quantum well (QW) structure. We measured the precession of the optically injected electron spins at zero magnetic field by a time-resolved Kerr rotation (TRKR) technique as a function of the gate voltage V_g. The V_g-dependence of the effective magnetic field extracted from the TRKR data was quantitatively analyzed by considering both Rashba and Dresselhaus spinorbit interaction in a Monte Carlo simulation. With the Dresselhaus spinorbit coupling parameter γ and the scattering time as fitting parameters, we reproduced the experimental TRKR data, from which we estimated γ∼13 eV ³.

Original language	English
Pages (from-to)	2698-2701
Number of pages	4
Journal	Physica E: Low-Dimensional Systems and Nanostructures
Volume	42
Issue number	10
DOIs	https://doi.org/10.1016/j.physe.2010.03.026
Publication status	Published - 2010 Sep 1

Keywords

GaAs
Spinorbit interaction
Spintronics
Time-resolved Kerr rotation

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics

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title = "Optical detection of zero-field spin precession of high mobility two-dimensional electron gas in a gated GaAs/AlGaAs quantum well",

abstract = "We investigated the effective magnetic field induced by spinorbit interaction in a gated modulation-doped GaAs/AlGaAs quantum well (QW) structure. We measured the precession of the optically injected electron spins at zero magnetic field by a time-resolved Kerr rotation (TRKR) technique as a function of the gate voltage Vg. The Vg-dependence of the effective magnetic field extracted from the TRKR data was quantitatively analyzed by considering both Rashba and Dresselhaus spinorbit interaction in a Monte Carlo simulation. With the Dresselhaus spinorbit coupling parameter γ and the scattering time as fitting parameters, we reproduced the experimental TRKR data, from which we estimated γ∼13 eV 3.",

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T1 - Optical detection of zero-field spin precession of high mobility two-dimensional electron gas in a gated GaAs/AlGaAs quantum well

AU - Takahashi, T.

AU - Matsuzaka, S.

AU - Ohno, Y.

AU - Ohno, H.

PY - 2010/9/1

Y1 - 2010/9/1

N2 - We investigated the effective magnetic field induced by spinorbit interaction in a gated modulation-doped GaAs/AlGaAs quantum well (QW) structure. We measured the precession of the optically injected electron spins at zero magnetic field by a time-resolved Kerr rotation (TRKR) technique as a function of the gate voltage Vg. The Vg-dependence of the effective magnetic field extracted from the TRKR data was quantitatively analyzed by considering both Rashba and Dresselhaus spinorbit interaction in a Monte Carlo simulation. With the Dresselhaus spinorbit coupling parameter γ and the scattering time as fitting parameters, we reproduced the experimental TRKR data, from which we estimated γ∼13 eV 3.

AB - We investigated the effective magnetic field induced by spinorbit interaction in a gated modulation-doped GaAs/AlGaAs quantum well (QW) structure. We measured the precession of the optically injected electron spins at zero magnetic field by a time-resolved Kerr rotation (TRKR) technique as a function of the gate voltage Vg. The Vg-dependence of the effective magnetic field extracted from the TRKR data was quantitatively analyzed by considering both Rashba and Dresselhaus spinorbit interaction in a Monte Carlo simulation. With the Dresselhaus spinorbit coupling parameter γ and the scattering time as fitting parameters, we reproduced the experimental TRKR data, from which we estimated γ∼13 eV 3.

KW - GaAs

KW - Spinorbit interaction

KW - Spintronics

KW - Time-resolved Kerr rotation

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JO - Physica E: Low-Dimensional Systems and Nanostructures

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