Abstract
We investigated the effective magnetic field induced by spinorbit interaction in a gated modulation-doped GaAs/AlGaAs quantum well (QW) structure. We measured the precession of the optically injected electron spins at zero magnetic field by a time-resolved Kerr rotation (TRKR) technique as a function of the gate voltage Vg. The Vg-dependence of the effective magnetic field extracted from the TRKR data was quantitatively analyzed by considering both Rashba and Dresselhaus spinorbit interaction in a Monte Carlo simulation. With the Dresselhaus spinorbit coupling parameter γ and the scattering time as fitting parameters, we reproduced the experimental TRKR data, from which we estimated γ∼13 eV 3.
Original language | English |
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Pages (from-to) | 2698-2701 |
Number of pages | 4 |
Journal | Physica E: Low-Dimensional Systems and Nanostructures |
Volume | 42 |
Issue number | 10 |
DOIs | |
Publication status | Published - 2010 Sep 1 |
Keywords
- GaAs
- Spinorbit interaction
- Spintronics
- Time-resolved Kerr rotation
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics