Optical detection of zero-field spin precession of high mobility two-dimensional electron gas in a gated GaAs/AlGaAs quantum well

T. Takahashi, S. Matsuzaka, Y. Ohno, H. Ohno

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)

Abstract

We investigated the effective magnetic field induced by spinorbit interaction in a gated modulation-doped GaAs/AlGaAs quantum well (QW) structure. We measured the precession of the optically injected electron spins at zero magnetic field by a time-resolved Kerr rotation (TRKR) technique as a function of the gate voltage Vg. The Vg-dependence of the effective magnetic field extracted from the TRKR data was quantitatively analyzed by considering both Rashba and Dresselhaus spinorbit interaction in a Monte Carlo simulation. With the Dresselhaus spinorbit coupling parameter γ and the scattering time as fitting parameters, we reproduced the experimental TRKR data, from which we estimated γ∼13 eV 3.

Original languageEnglish
Pages (from-to)2698-2701
Number of pages4
JournalPhysica E: Low-Dimensional Systems and Nanostructures
Volume42
Issue number10
DOIs
Publication statusPublished - 2010 Sep 1

Keywords

  • GaAs
  • Spinorbit interaction
  • Spintronics
  • Time-resolved Kerr rotation

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics

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