Fast crystallization and low power amorphization are essential to achieve rapid data recording and low power consumption in phase-change memory. This work investigated the laser-induced phase transition behaviors of GeCu 2Te3 film based on the reflectance of amorphous and crystalline states. The GeCu2Te3 film showed a reflectance decrease upon crystallization, which was the opposite behavior in Ge 2Sb2Te5 film. The crystallization starting time of the as-deposited GeCu2Te3 film was as fast as that of the as-deposited Ge2Sb2Te5 film. Furthermore, the GeCu2Te3 crystalline film was found to be reamorphized by laser irradiation at lower power and shorter pulse width than the Ge 2Sb2Te5.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)