Optical characterization of InAsN single quantum wells grown by RF-MBE

M. Kuroda, R. Katayama, K. Onabe, Y. Shiraki

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11 Citations (Scopus)


InAsN/GaAs single quantum wells (SQWs) were fabricated on semi insulating GaAs(001) substrates by RF-MBE. The redshift of photoluminescence peak with increasing nitrogen content was observed. It is contrary to the recent report for the bulk dilute InAsN alloy where the blueshift of absorption edge has occurred predominantly due to the Burstein-Moss effect. Considering that the Burstein-Moss shift energy of the one-dimensional quantum well is significantly lower than that of the bulk, this redshift of photoluminescence peak suggests the huge bandgap bowing of InAsN alloy as commonly found in III-V-N type alloys.

Original languageEnglish
Pages (from-to)2791-2794
Number of pages4
JournalPhysica Status Solidi (B) Basic Research
Issue number12
Publication statusPublished - 2004 Oct 1

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics


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