Optical characterization of InAsN single quantum wells grown by RF-MBE

M. Kuroda; R. Katayama; K. Onabe; Y. Shiraki

doi:10.1002/pssb.200405032

Optical characterization of InAsN single quantum wells grown by RF-MBE

M. Kuroda, R. Katayama, K. Onabe, Y. Shiraki

Materials Design Division

Research output: Contribution to journal › Article › peer-review

11 Citations (Scopus)

Abstract

InAsN/GaAs single quantum wells (SQWs) were fabricated on semi insulating GaAs(001) substrates by RF-MBE. The redshift of photoluminescence peak with increasing nitrogen content was observed. It is contrary to the recent report for the bulk dilute InAsN alloy where the blueshift of absorption edge has occurred predominantly due to the Burstein-Moss effect. Considering that the Burstein-Moss shift energy of the one-dimensional quantum well is significantly lower than that of the bulk, this redshift of photoluminescence peak suggests the huge bandgap bowing of InAsN alloy as commonly found in III-V-N type alloys.

Original language	English
Pages (from-to)	2791-2794
Number of pages	4
Journal	Physica Status Solidi (B) Basic Research
Volume	241
Issue number	12
DOIs	https://doi.org/10.1002/pssb.200405032
Publication status	Published - 2004 Oct 1

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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@article{5d13f9229b1a49c288a44626168a09be,

title = "Optical characterization of InAsN single quantum wells grown by RF-MBE",

abstract = "InAsN/GaAs single quantum wells (SQWs) were fabricated on semi insulating GaAs(001) substrates by RF-MBE. The redshift of photoluminescence peak with increasing nitrogen content was observed. It is contrary to the recent report for the bulk dilute InAsN alloy where the blueshift of absorption edge has occurred predominantly due to the Burstein-Moss effect. Considering that the Burstein-Moss shift energy of the one-dimensional quantum well is significantly lower than that of the bulk, this redshift of photoluminescence peak suggests the huge bandgap bowing of InAsN alloy as commonly found in III-V-N type alloys.",

author = "M. Kuroda and R. Katayama and K. Onabe and Y. Shiraki",

year = "2004",

month = oct,

day = "1",

doi = "10.1002/pssb.200405032",

language = "English",

volume = "241",

pages = "2791--2794",

journal = "Physica Status Solidi (B): Basic Research",

issn = "0370-1972",

publisher = "Wiley-VCH Verlag",

number = "12",

}

TY - JOUR

T1 - Optical characterization of InAsN single quantum wells grown by RF-MBE

AU - Kuroda, M.

AU - Katayama, R.

AU - Onabe, K.

AU - Shiraki, Y.

PY - 2004/10/1

Y1 - 2004/10/1

N2 - InAsN/GaAs single quantum wells (SQWs) were fabricated on semi insulating GaAs(001) substrates by RF-MBE. The redshift of photoluminescence peak with increasing nitrogen content was observed. It is contrary to the recent report for the bulk dilute InAsN alloy where the blueshift of absorption edge has occurred predominantly due to the Burstein-Moss effect. Considering that the Burstein-Moss shift energy of the one-dimensional quantum well is significantly lower than that of the bulk, this redshift of photoluminescence peak suggests the huge bandgap bowing of InAsN alloy as commonly found in III-V-N type alloys.

AB - InAsN/GaAs single quantum wells (SQWs) were fabricated on semi insulating GaAs(001) substrates by RF-MBE. The redshift of photoluminescence peak with increasing nitrogen content was observed. It is contrary to the recent report for the bulk dilute InAsN alloy where the blueshift of absorption edge has occurred predominantly due to the Burstein-Moss effect. Considering that the Burstein-Moss shift energy of the one-dimensional quantum well is significantly lower than that of the bulk, this redshift of photoluminescence peak suggests the huge bandgap bowing of InAsN alloy as commonly found in III-V-N type alloys.

UR - http://www.scopus.com/inward/record.url?scp=7444266715&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=7444266715&partnerID=8YFLogxK

U2 - 10.1002/pssb.200405032

DO - 10.1002/pssb.200405032

M3 - Article

AN - SCOPUS:7444266715

VL - 241

SP - 2791

EP - 2794

JO - Physica Status Solidi (B): Basic Research

JF - Physica Status Solidi (B): Basic Research

SN - 0370-1972

IS - 12

ER -

Optical characterization of InAsN single quantum wells grown by RF-MBE

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