Optical characterization of impact ionization in flip-chip-bonded InP-based high electron mobility transistors

Naotem Shigekawa, Tomofumi Furuta, Tetsuya Suemitsu, Yohtaro Umeda

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)

Abstract

Impact ionization in flip-chip-bonded InP-based high electron mobility transistors (HEMTs) with 0.1-μm gates is examined by measuring their electroluminescence (EL). We extract quantities proportional to the concentration of impact-ionization-induced holes at the source edge and the impact ionization probability of a single electron for a wide range of bias voltages. The lateral extension of the high-field region at the drain edge, where the impact ionization occurs, is also estimated. Furthermore, the EL signal from each of two neighboring HEMTs separated by 20 μm is clearly resolved in the spatial distribution measurement, which suggests that the present method is also applicable for characterizing individual devices in actual ICs.

Original languageEnglish
Pages (from-to)5823-5828
Number of pages6
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume38
Issue number10
DOIs
Publication statusPublished - 1999 Oct
Externally publishedYes

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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