Optical characterization of Er-implanted ZnO films formed by sol-gel method

T. Fukudome; A. Kaminaka; H. Isshiki; R. Saito; S. Yugo; T. Kimura

doi:10.1016/S0168-583X(03)00746-8

Optical characterization of Er-implanted ZnO films formed by sol-gel method

T. Fukudome, A. Kaminaka, H. Isshiki, R. Saito, S. Yugo, T. Kimura

Research output: Contribution to journal › Conference article › peer-review

27 Citations (Scopus)

Abstract

In this paper, we report on the 1.54 μm photoluminescence (PL) of Er-implanted ZnO thin films formed by a sol-gel method on Si substrates. In spite of the polycrystalline structure of the sol-gel ZnO thin films, they showed strong PL emissions due to the near band edge recombination at 375 nm as well as the Er-related luminescence at 1.54 μm. The Er-related luminescence showed no decrease (quench) in the intensity up to the Er concentration of 1.5×10²¹ cm^-3. The PL intensity of Er-implanted ZnO at 1.54 μm was found to be as strong as Er-doped PS (porous Si) at 20 K, and the intensity reduced to 1/3 at room temperature.

Original language	English
Pages (from-to)	287-290
Number of pages	4
Journal	Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume	206
DOIs	https://doi.org/10.1016/S0168-583X(03)00746-8
Publication status	Published - 2003 May 1
Externally published	Yes
Event	13th International conference on Ion beam modification of Mate - Kobe, Japan Duration: 2002 Sep 1 → 2002 Sep 6

Keywords

Er
Implantation
Photoluminescence
Sol-gel
ZnO

ASJC Scopus subject areas

Nuclear and High Energy Physics
Instrumentation

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10.1016/S0168-583X(03)00746-8

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title = "Optical characterization of Er-implanted ZnO films formed by sol-gel method",

abstract = "In this paper, we report on the 1.54 μm photoluminescence (PL) of Er-implanted ZnO thin films formed by a sol-gel method on Si substrates. In spite of the polycrystalline structure of the sol-gel ZnO thin films, they showed strong PL emissions due to the near band edge recombination at 375 nm as well as the Er-related luminescence at 1.54 μm. The Er-related luminescence showed no decrease (quench) in the intensity up to the Er concentration of 1.5×1021 cm-3. The PL intensity of Er-implanted ZnO at 1.54 μm was found to be as strong as Er-doped PS (porous Si) at 20 K, and the intensity reduced to 1/3 at room temperature.",

keywords = "Er, Implantation, Photoluminescence, Sol-gel, ZnO",

author = "T. Fukudome and A. Kaminaka and H. Isshiki and R. Saito and S. Yugo and T. Kimura",

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doi = "10.1016/S0168-583X(03)00746-8",

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note = "13th International conference on Ion beam modification of Mate ; Conference date: 01-09-2002 Through 06-09-2002",

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TY - JOUR

T1 - Optical characterization of Er-implanted ZnO films formed by sol-gel method

AU - Fukudome, T.

AU - Kaminaka, A.

AU - Isshiki, H.

AU - Saito, R.

AU - Yugo, S.

AU - Kimura, T.

PY - 2003/5/1

Y1 - 2003/5/1

N2 - In this paper, we report on the 1.54 μm photoluminescence (PL) of Er-implanted ZnO thin films formed by a sol-gel method on Si substrates. In spite of the polycrystalline structure of the sol-gel ZnO thin films, they showed strong PL emissions due to the near band edge recombination at 375 nm as well as the Er-related luminescence at 1.54 μm. The Er-related luminescence showed no decrease (quench) in the intensity up to the Er concentration of 1.5×1021 cm-3. The PL intensity of Er-implanted ZnO at 1.54 μm was found to be as strong as Er-doped PS (porous Si) at 20 K, and the intensity reduced to 1/3 at room temperature.

AB - In this paper, we report on the 1.54 μm photoluminescence (PL) of Er-implanted ZnO thin films formed by a sol-gel method on Si substrates. In spite of the polycrystalline structure of the sol-gel ZnO thin films, they showed strong PL emissions due to the near band edge recombination at 375 nm as well as the Er-related luminescence at 1.54 μm. The Er-related luminescence showed no decrease (quench) in the intensity up to the Er concentration of 1.5×1021 cm-3. The PL intensity of Er-implanted ZnO at 1.54 μm was found to be as strong as Er-doped PS (porous Si) at 20 K, and the intensity reduced to 1/3 at room temperature.

KW - Er

KW - Implantation

KW - Photoluminescence

KW - Sol-gel

KW - ZnO

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U2 - 10.1016/S0168-583X(03)00746-8

DO - 10.1016/S0168-583X(03)00746-8

M3 - Conference article

AN - SCOPUS:0037809195

VL - 206

SP - 287

EP - 290

JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

SN - 0168-583X

T2 - 13th International conference on Ion beam modification of Mate

Y2 - 1 September 2002 through 6 September 2002

ER -

Optical characterization of Er-implanted ZnO films formed by sol-gel method

Abstract

Keywords

ASJC Scopus subject areas

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