Abstract
In this paper, we report on the 1.54 μm photoluminescence (PL) of Er-implanted ZnO thin films formed by a sol-gel method on Si substrates. In spite of the polycrystalline structure of the sol-gel ZnO thin films, they showed strong PL emissions due to the near band edge recombination at 375 nm as well as the Er-related luminescence at 1.54 μm. The Er-related luminescence showed no decrease (quench) in the intensity up to the Er concentration of 1.5×1021 cm-3. The PL intensity of Er-implanted ZnO at 1.54 μm was found to be as strong as Er-doped PS (porous Si) at 20 K, and the intensity reduced to 1/3 at room temperature.
| Original language | English |
|---|---|
| Pages (from-to) | 287-290 |
| Number of pages | 4 |
| Journal | Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms |
| Volume | 206 |
| DOIs | |
| Publication status | Published - 2003 May 1 |
| Externally published | Yes |
| Event | 13th International conference on Ion beam modification of Mate - Kobe, Japan Duration: 2002 Sep 1 → 2002 Sep 6 |
Keywords
- Er
- Implantation
- Photoluminescence
- Sol-gel
- ZnO
ASJC Scopus subject areas
- Nuclear and High Energy Physics
- Instrumentation
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Cite this
Fukudome, T., Kaminaka, A., Isshiki, H., Saito, R., Yugo, S., & Kimura, T. (2003). Optical characterization of Er-implanted ZnO films formed by sol-gel method. Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 206, 287-290. https://doi.org/10.1016/S0168-583X(03)00746-8