Optical characterization of Er-implanted ZnO films formed by sol-gel method

T. Fukudome, A. Kaminaka, H. Isshiki, R. Saito, S. Yugo, T. Kimura

Research output: Contribution to journalConference article

27 Citations (Scopus)

Abstract

In this paper, we report on the 1.54 μm photoluminescence (PL) of Er-implanted ZnO thin films formed by a sol-gel method on Si substrates. In spite of the polycrystalline structure of the sol-gel ZnO thin films, they showed strong PL emissions due to the near band edge recombination at 375 nm as well as the Er-related luminescence at 1.54 μm. The Er-related luminescence showed no decrease (quench) in the intensity up to the Er concentration of 1.5×1021 cm-3. The PL intensity of Er-implanted ZnO at 1.54 μm was found to be as strong as Er-doped PS (porous Si) at 20 K, and the intensity reduced to 1/3 at room temperature.

Original languageEnglish
Pages (from-to)287-290
Number of pages4
JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume206
DOIs
Publication statusPublished - 2003 May 1
Externally publishedYes
Event13th International conference on Ion beam modification of Mate - Kobe, Japan
Duration: 2002 Sep 12002 Sep 6

Keywords

  • Er
  • Implantation
  • Photoluminescence
  • Sol-gel
  • ZnO

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Instrumentation

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