Optical characterization of bulk GaN grown from a Na/Ga flux

K. Palle; L. Chen; H. X. Liu; B. J. Skromme; H. Yamane; M. Aoki; C. B. Hoffman; F. J. DiSalvo

doi:10.1557/proc-743-l3.36

Optical characterization of bulk GaN grown from a Na/Ga flux

K. Palle, L. Chen, H. X. Liu, B. J. Skromme, H. Yamane, M. Aoki, C. B. Hoffman, F. J. DiSalvo

Division of Inorganic Material Research

Research output: Contribution to journal › Conference article › peer-review

Abstract

Bulk GaN crystals up to several mm in size, grown by a Na/Ga flux method, have been characterized using room and low temperature photoluminescence (PL) and panchromatic cathodoluminescence (CL) imaging. Highly resolved excitonic PL spectra are obtained for material grown in a new, large-scale reactor. The crystal polarity affects the incorporation of residual Zn and Mg or Si acceptors and the deep level luminescence bands in c-oriented platelets. A Zn (A°,X) triplet structure with unusual thermalization properties and a highly resolved structural defect related PL peak are observed. Striations are found in some of the smaller platelets by CL imaging, but are absent in the prismatic crystals.

Original language	English
Pages (from-to)	201-206
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	743
DOIs	https://doi.org/10.1557/proc-743-l3.36
Publication status	Published - 2002
Event	Gan and Related Alloys - 2002 - Boston, MA, United States Duration: 2002 Dec 2 → 2002 Dec 6

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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title = "Optical characterization of bulk GaN grown from a Na/Ga flux",

abstract = "Bulk GaN crystals up to several mm in size, grown by a Na/Ga flux method, have been characterized using room and low temperature photoluminescence (PL) and panchromatic cathodoluminescence (CL) imaging. Highly resolved excitonic PL spectra are obtained for material grown in a new, large-scale reactor. The crystal polarity affects the incorporation of residual Zn and Mg or Si acceptors and the deep level luminescence bands in c-oriented platelets. A Zn (A°,X) triplet structure with unusual thermalization properties and a highly resolved structural defect related PL peak are observed. Striations are found in some of the smaller platelets by CL imaging, but are absent in the prismatic crystals.",

author = "K. Palle and L. Chen and Liu, {H. X.} and Skromme, {B. J.} and H. Yamane and M. Aoki and Hoffman, {C. B.} and DiSalvo, {F. J.}",

year = "2002",

doi = "10.1557/proc-743-l3.36",

language = "English",

volume = "743",

pages = "201--206",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "Gan and Related Alloys - 2002 ; Conference date: 02-12-2002 Through 06-12-2002",

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TY - JOUR

T1 - Optical characterization of bulk GaN grown from a Na/Ga flux

AU - Palle, K.

AU - Chen, L.

AU - Liu, H. X.

AU - Skromme, B. J.

AU - Yamane, H.

AU - Aoki, M.

AU - Hoffman, C. B.

AU - DiSalvo, F. J.

PY - 2002

Y1 - 2002

N2 - Bulk GaN crystals up to several mm in size, grown by a Na/Ga flux method, have been characterized using room and low temperature photoluminescence (PL) and panchromatic cathodoluminescence (CL) imaging. Highly resolved excitonic PL spectra are obtained for material grown in a new, large-scale reactor. The crystal polarity affects the incorporation of residual Zn and Mg or Si acceptors and the deep level luminescence bands in c-oriented platelets. A Zn (A°,X) triplet structure with unusual thermalization properties and a highly resolved structural defect related PL peak are observed. Striations are found in some of the smaller platelets by CL imaging, but are absent in the prismatic crystals.

AB - Bulk GaN crystals up to several mm in size, grown by a Na/Ga flux method, have been characterized using room and low temperature photoluminescence (PL) and panchromatic cathodoluminescence (CL) imaging. Highly resolved excitonic PL spectra are obtained for material grown in a new, large-scale reactor. The crystal polarity affects the incorporation of residual Zn and Mg or Si acceptors and the deep level luminescence bands in c-oriented platelets. A Zn (A°,X) triplet structure with unusual thermalization properties and a highly resolved structural defect related PL peak are observed. Striations are found in some of the smaller platelets by CL imaging, but are absent in the prismatic crystals.

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DO - 10.1557/proc-743-l3.36

M3 - Conference article

AN - SCOPUS:0038710549

VL - 743

SP - 201

EP - 206

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

SN - 0272-9172

T2 - Gan and Related Alloys - 2002

Y2 - 2 December 2002 through 6 December 2002

ER -

Optical characterization of bulk GaN grown from a Na/Ga flux

Abstract

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