Abstract
Bulk GaN crystals up to several mm in size, grown by a Na/Ga flux method, have been characterized using room and low temperature photoluminescence (PL) and panchromatic cathodoluminescence (CL) imaging. Highly resolved excitonic PL spectra are obtained for material grown in a new, large-scale reactor. The crystal polarity affects the incorporation of residual Zn and Mg or Si acceptors and the deep level luminescence bands in c-oriented platelets. A Zn (A°,X) triplet structure with unusual thermalization properties and a highly resolved structural defect related PL peak are observed. Striations are found in some of the smaller platelets by CL imaging, but are absent in the prismatic crystals.
| Original language | English |
|---|---|
| Pages (from-to) | 201-206 |
| Number of pages | 6 |
| Journal | Materials Research Society Symposium - Proceedings |
| Volume | 743 |
| Publication status | Published - 2002 Dec 1 |
| Event | Gan and Related Alloys - 2002 - Boston, MA, United States Duration: 2002 Dec 2 → 2002 Dec 6 |
ASJC Scopus subject areas
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering
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Palle, K., Chen, L., Liu, H. X., Skromme, B. J., Yamane, H., Aoki, M., Hoffman, C. B., & DiSalvo, F. J. (2002). Optical characterization of bulk GaN grown from a Na/Ga flux. Materials Research Society Symposium - Proceedings, 743, 201-206.