Optical characteristics of multiple layered InGaN quantum wells on GaN nanowalls grown on Si (111) substrate

Yosuke Tamura, Kazuhiro Hane

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)

Abstract

GaN nanowall crystals and InGaN multiple quantum wells (MQWs) were grown on Si (111) substrate using molecular beam epitaxy. In high N/Ga flux ratio, dense two dimensional network GaN nanowall structures were grown with small pores. The continuity of GaN nanowall structures was decreased as decreasing the N/Ga flux ratio. In the N/Ga flux ratio of 50, nanopillars and nanowalls were mixed. The InGaN MQWs were formed on the GaN nanowall crystals which were grown in the various N/Ga flux ratios. The strong photoluminescence originated from the InGaN MQWs on GaN nanowall crystals around a wavelength of 400 nm was observed at the temperatures from 8 K to 300 K (room temperature). The ratios of the photoluminescence intensities at 8 K and the room temperature were measured for the InGaN MQWs. The higher ratio was obtained as decreasing the N/Ga flux ratio of the GaN nanowall crystal growth.

Original languageEnglish
Pages (from-to)563-567
Number of pages5
JournalMaterials Research Bulletin
Volume83
DOIs
Publication statusPublished - 2016 Nov 1

Keywords

  • Electron microscopy
  • Epitaxial growth
  • Nanostructures
  • Nitrides
  • Semiconductors
  • X-ray diffraction

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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