Optical characteristics of GaAs quantum nanodisks arrays by using neutral beam top-down process

Akio Rigo, Takayuki Kiba, Yosuke Tamura, Cedric Thomas, Ichiro Yamashita, Akihiro Murayama, Seiji Samukawa

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Quantum dots (QDs) photonic devices based on III-V compound semiconductor are attractive optoelectronic devices due to their low power consumption, temperature stability, and high-speed modulation. We have developed a defect-free, top-down fabrication process for sub-20-nm-diameter GaAs quantum nanodisks (NDs) by employing a biotemplate and neutral beam etching and produced 4- and 8-nm-thick GaAs NDs embedded in an AlGaAs barrier regrown using metalorganic vapor phase epitaxy (MOVPE). The optical properties were characterized by using time-resolved photoluminescence spectroscopy. We confirmed that the emission energies and the transient behavior of the PL as a function of temperature were strongly affected by the quantum confinement effects of the NDs.

Original languageEnglish
Title of host publication2014 International Conference on Optical MEMS and Nanophotonics, OMN 2014 - Proceedings
PublisherIEEE Computer Society
Pages43-44
Number of pages2
ISBN (Electronic)9780992841423
DOIs
Publication statusPublished - 2014 Oct 14
Event2014 International Conference on Optical MEMS and Nanophotonics, OMN 2014 - Glasgow, United Kingdom
Duration: 2014 Aug 172014 Aug 21

Publication series

NameInternational Conference on Optical MEMS and Nanophotonics
ISSN (Print)2160-5033
ISSN (Electronic)2160-5041

Other

Other2014 International Conference on Optical MEMS and Nanophotonics, OMN 2014
CountryUnited Kingdom
CityGlasgow
Period14/8/1714/8/21

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

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