TY - JOUR
T1 - Optical characteristic improvement of neodymium-doped lanthanum fluoride thin films grown by pulsed laser deposition for vacuum ultraviolet application
AU - Ieda, Mirai
AU - Ishimaru, Tatsuya
AU - Ono, Shingo
AU - Yamanoi, Kohei
AU - Cadatal-Raduban, Marilou
AU - Shimizu, Toshihiko
AU - Sarukura, Nobuhiko
AU - Fukuda, Kentaro
AU - Suyama, Toshihisa
AU - Yokota, Yuui
AU - Yanagida, Takayuki
AU - Yoshikawa, Akira
PY - 2012/2/1
Y1 - 2012/2/1
N2 - Neodymium-doped lanthanum fluoride (Nd 3+:LaF 3) thin films were successfully grown on MgF 2(001) substrates by pulsed laser deposition. Photoluminescence spectra revealed a dominant peak at 173nm with a decay time of 7.8 ns, which is similar to the results obtained from a bulk Nd 3+:LaF 3 crystal. Improvements in crystalline quality and vacuum ultraviolet (VUV) luminescence quantum efficiency were achieved by substrate heating, with optimum results being obtained at 400 °C. These results would open up possibilities in the development of a light-emitting device operating in the VUV region.
AB - Neodymium-doped lanthanum fluoride (Nd 3+:LaF 3) thin films were successfully grown on MgF 2(001) substrates by pulsed laser deposition. Photoluminescence spectra revealed a dominant peak at 173nm with a decay time of 7.8 ns, which is similar to the results obtained from a bulk Nd 3+:LaF 3 crystal. Improvements in crystalline quality and vacuum ultraviolet (VUV) luminescence quantum efficiency were achieved by substrate heating, with optimum results being obtained at 400 °C. These results would open up possibilities in the development of a light-emitting device operating in the VUV region.
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U2 - 10.1143/JJAP.51.022603
DO - 10.1143/JJAP.51.022603
M3 - Article
AN - SCOPUS:84863404152
VL - 51
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 2 PART 1
M1 - 022603
ER -