Optical characteristic improvement of neodymium-doped lanthanum fluoride thin films grown by pulsed laser deposition for vacuum ultraviolet application

Mirai Ieda; Tatsuya Ishimaru; Shingo Ono; Kohei Yamanoi; Marilou Cadatal-Raduban; Toshihiko Shimizu; Nobuhiko Sarukura; Kentaro Fukuda; Toshihisa Suyama; Yuui Yokota; Takayuki Yanagida; Akira Yoshikawa

doi:10.1143/JJAP.51.022603

Optical characteristic improvement of neodymium-doped lanthanum fluoride thin films grown by pulsed laser deposition for vacuum ultraviolet application

Mirai Ieda, Tatsuya Ishimaru, Shingo Ono, Kohei Yamanoi, Marilou Cadatal-Raduban, Toshihiko Shimizu, Nobuhiko Sarukura, Kentaro Fukuda, Toshihisa Suyama, Yuui Yokota, Takayuki Yanagida, Akira Yoshikawa

Research output: Contribution to journal › Article › peer-review

14 Citations (Scopus)

Abstract

Neodymium-doped lanthanum fluoride (Nd ³⁺:LaF ₃) thin films were successfully grown on MgF ₂(001) substrates by pulsed laser deposition. Photoluminescence spectra revealed a dominant peak at 173nm with a decay time of 7.8 ns, which is similar to the results obtained from a bulk Nd ³⁺:LaF ₃ crystal. Improvements in crystalline quality and vacuum ultraviolet (VUV) luminescence quantum efficiency were achieved by substrate heating, with optimum results being obtained at 400 °C. These results would open up possibilities in the development of a light-emitting device operating in the VUV region.

Original language	English
Article number	022603
Journal	Japanese journal of applied physics
Volume	51
Issue number	2 PART 1
DOIs	https://doi.org/10.1143/JJAP.51.022603
Publication status	Published - 2012 Feb 1

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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Ieda, M., Ishimaru, T., Ono, S., Yamanoi, K., Cadatal-Raduban, M., Shimizu, T., Sarukura, N., Fukuda, K., Suyama, T., Yokota, Y., Yanagida, T., & Yoshikawa, A. (2012). Optical characteristic improvement of neodymium-doped lanthanum fluoride thin films grown by pulsed laser deposition for vacuum ultraviolet application. Japanese journal of applied physics, 51(2 PART 1), [022603]. https://doi.org/10.1143/JJAP.51.022603

Optical characteristic improvement of neodymium-doped lanthanum fluoride thin films grown by pulsed laser deposition for vacuum ultraviolet application. / Ieda, Mirai; Ishimaru, Tatsuya; Ono, Shingo; Yamanoi, Kohei; Cadatal-Raduban, Marilou; Shimizu, Toshihiko; Sarukura, Nobuhiko; Fukuda, Kentaro; Suyama, Toshihisa; Yokota, Yuui; Yanagida, Takayuki; Yoshikawa, Akira.

In: Japanese journal of applied physics, Vol. 51, No. 2 PART 1, 022603, 01.02.2012.

Research output: Contribution to journal › Article › peer-review

Ieda, M, Ishimaru, T, Ono, S, Yamanoi, K, Cadatal-Raduban, M, Shimizu, T, Sarukura, N, Fukuda, K, Suyama, T, Yokota, Y, Yanagida, T & Yoshikawa, A 2012, 'Optical characteristic improvement of neodymium-doped lanthanum fluoride thin films grown by pulsed laser deposition for vacuum ultraviolet application', Japanese journal of applied physics, vol. 51, no. 2 PART 1, 022603. https://doi.org/10.1143/JJAP.51.022603

Ieda, Mirai ; Ishimaru, Tatsuya ; Ono, Shingo ; Yamanoi, Kohei ; Cadatal-Raduban, Marilou ; Shimizu, Toshihiko ; Sarukura, Nobuhiko ; Fukuda, Kentaro ; Suyama, Toshihisa ; Yokota, Yuui ; Yanagida, Takayuki ; Yoshikawa, Akira. / Optical characteristic improvement of neodymium-doped lanthanum fluoride thin films grown by pulsed laser deposition for vacuum ultraviolet application. In: Japanese journal of applied physics. 2012 ; Vol. 51, No. 2 PART 1.

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abstract = "Neodymium-doped lanthanum fluoride (Nd 3+:LaF 3) thin films were successfully grown on MgF 2(001) substrates by pulsed laser deposition. Photoluminescence spectra revealed a dominant peak at 173nm with a decay time of 7.8 ns, which is similar to the results obtained from a bulk Nd 3+:LaF 3 crystal. Improvements in crystalline quality and vacuum ultraviolet (VUV) luminescence quantum efficiency were achieved by substrate heating, with optimum results being obtained at 400 °C. These results would open up possibilities in the development of a light-emitting device operating in the VUV region.",

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AU - Ieda, Mirai

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AU - Yamanoi, Kohei

AU - Cadatal-Raduban, Marilou

AU - Shimizu, Toshihiko

AU - Sarukura, Nobuhiko

AU - Fukuda, Kentaro

AU - Suyama, Toshihisa

AU - Yokota, Yuui

AU - Yanagida, Takayuki

AU - Yoshikawa, Akira

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AB - Neodymium-doped lanthanum fluoride (Nd 3+:LaF 3) thin films were successfully grown on MgF 2(001) substrates by pulsed laser deposition. Photoluminescence spectra revealed a dominant peak at 173nm with a decay time of 7.8 ns, which is similar to the results obtained from a bulk Nd 3+:LaF 3 crystal. Improvements in crystalline quality and vacuum ultraviolet (VUV) luminescence quantum efficiency were achieved by substrate heating, with optimum results being obtained at 400 °C. These results would open up possibilities in the development of a light-emitting device operating in the VUV region.

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Optical characteristic improvement of neodymium-doped lanthanum fluoride thin films grown by pulsed laser deposition for vacuum ultraviolet application

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