In this paper GaNxAs1-x surfaces during growth are observed using reflectance difference or reflectance anisotropy spectroscopy (RDS or RAS). The epi-layer was grown by solid-source molecular beam epitaxy (MBE) system with a RF nitrogen prasma source. RD spectra showed broader structure and reduced amplitude compared to those of GaAs surfaces; GaAs(2 × 4)-like features were still observed with weak and blue-shifted peaks. In the low growth temperature region, an extra structure was also observed around 3.02 eV. We proposed that GaNxAs1-xsurface can be classified into three types of the surface.
- Molecular beam epitaxy (MBE)
- Reflectance anisotropy spectroscopy (RAS)
- Reflectance difference spectroscopy (RDS)
ASJC Scopus subject areas
- Materials Science(all)
- Physics and Astronomy(all)