Optical anisotropy and surface morphology of InGaAs lattice-mismatched with GaAs(0 0 1)

Toshiharu Morimura, Takahiro Mori, Meoung Whan Cho, Takashi Hanada, Takafumi Yao

Research output: Contribution to journalArticlepeer-review

Abstract

We investigated surface morphology and optical anisotropy of strained InGaAs films grown on GaAs(0 0 1) substrate using atomic force microscopy (AFM) and reflectance difference/reflectance anisotropy spectroscopy (RDS/RAS). High temperature (HT)-grown samples were found to have a rippled surface structure, however for films grown using a low temperature (LT) growth technique, the surface morphology was significantly improved, without the ripple structure seen on the HT samples. Furthermore, ex situ RD spectra of LT-grown samples showed notable peaks near the critical energies of band structure originated from bulk electronic transitions.

Original languageEnglish
Pages (from-to)621-624
Number of pages4
JournalCurrent Applied Physics
Volume4
Issue number6
DOIs
Publication statusPublished - 2004 Nov 1

Keywords

  • Atomic force microscopy (AFM)
  • InGaAs
  • Low temperature growth
  • Molecular beam epitaxy (MBE)
  • Reflectance anisotropy spectroscopy (RAS)
  • Reflectance difference spectroscopy (RDS)
  • Surface morphology

ASJC Scopus subject areas

  • Materials Science(all)
  • Physics and Astronomy(all)

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