Optical and electrical properties of ¡-MnTe thin films deposited using RF magnetron sputtering

Shunsuke Mori; Yuji Sutou; Daisuke Ando; Junichi Koike

doi:10.2320/matertrans.M2018086

Optical and electrical properties of ¡-MnTe thin films deposited using RF magnetron sputtering

Shunsuke Mori, Yuji Sutou, Daisuke Ando, Junichi Koike

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

The optical and electrical properties of MnTe films were investigated to ascertain the feasibility of their use in solar cell applications. Three ¡-MnTe thin films with different composition, i.e., Mn-47.9 at% Te, Mn-49.2 at% Te, and Mn-50.4 at% Te, were prepared using RF magnetron sputtering. All the films demonstrated a high light absorption coefficient (0.2

Original language	English
Pages (from-to)	1506-1512
Number of pages	7
Journal	Materials Transactions
Volume	59
Issue number	9
DOIs	https://doi.org/10.2320/matertrans.M2018086
Publication status	Published - 2018

Keywords

Absorption coefficient
Manganese telluride
Optical band gap
Resistivity

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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10.2320/matertrans.M2018086

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@article{8966149eb11346649f9101769f26c749,

title = "Optical and electrical properties of ¡-MnTe thin films deposited using RF magnetron sputtering",

abstract = "The optical and electrical properties of MnTe films were investigated to ascertain the feasibility of their use in solar cell applications. Three ¡-MnTe thin films with different composition, i.e., Mn-47.9 at% Te, Mn-49.2 at% Te, and Mn-50.4 at% Te, were prepared using RF magnetron sputtering. All the films demonstrated a high light absorption coefficient (0.2",

keywords = "Absorption coefficient, Manganese telluride, Optical band gap, Resistivity",

author = "Shunsuke Mori and Yuji Sutou and Daisuke Ando and Junichi Koike",

note = "Publisher Copyright: {\textcopyright} 2018 The Japan Institute of Metals and Materials.",

year = "2018",

doi = "10.2320/matertrans.M2018086",

language = "English",

volume = "59",

pages = "1506--1512",

journal = "Materials Transactions",

issn = "1345-9678",

publisher = "Japan Institute of Metals (JIM)",

number = "9",

}

TY - JOUR

T1 - Optical and electrical properties of ¡-MnTe thin films deposited using RF magnetron sputtering

AU - Mori, Shunsuke

AU - Sutou, Yuji

AU - Ando, Daisuke

AU - Koike, Junichi

PY - 2018

Y1 - 2018

N2 - The optical and electrical properties of MnTe films were investigated to ascertain the feasibility of their use in solar cell applications. Three ¡-MnTe thin films with different composition, i.e., Mn-47.9 at% Te, Mn-49.2 at% Te, and Mn-50.4 at% Te, were prepared using RF magnetron sputtering. All the films demonstrated a high light absorption coefficient (0.2

AB - The optical and electrical properties of MnTe films were investigated to ascertain the feasibility of their use in solar cell applications. Three ¡-MnTe thin films with different composition, i.e., Mn-47.9 at% Te, Mn-49.2 at% Te, and Mn-50.4 at% Te, were prepared using RF magnetron sputtering. All the films demonstrated a high light absorption coefficient (0.2

KW - Absorption coefficient

KW - Manganese telluride

KW - Optical band gap

KW - Resistivity

UR - http://www.scopus.com/inward/record.url?scp=85052528968&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85052528968&partnerID=8YFLogxK

U2 - 10.2320/matertrans.M2018086

DO - 10.2320/matertrans.M2018086

M3 - Article

AN - SCOPUS:85052528968

VL - 59

SP - 1506

EP - 1512

JO - Materials Transactions

JF - Materials Transactions

SN - 1345-9678

IS - 9

ER -

Optical and electrical properties of ¡-MnTe thin films deposited using RF magnetron sputtering

Abstract

Keywords

ASJC Scopus subject areas

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