TY - JOUR
T1 - Optical and electrical properties of electron-irradiated Cu(In,Ga)Se 2 solar cells
AU - Hirose, Y.
AU - Warasawa, M.
AU - Takakura, K.
AU - Kimura, S.
AU - Chichibu, S. F.
AU - Ohyama, H.
AU - Sugiyama, M.
N1 - Funding Information:
The authors would like to thank C. Fujiwara, Y. Murata, and Y. Kawasaki for their assistance in conducting the experiments. They would also like to thank Dr. K. Tang, Dr. B. Fan, and Prof. H. Nakanishi for their stimulating discussions. In addition, the authors thank M. Yoneoka, H. Hanaya, Dr. S. Sato, and Dr. T. Ohshima for their contributions to the electron irradiation studies. This work was supported in part by Inter-University Laboratory for the Joint Use of JAEA Facilities and by the Advanced Device Laboratories, Research Institute for Science and Technology, Tokyo University of Science.
PY - 2011/8/31
Y1 - 2011/8/31
N2 - The optical and electrical properties of electron-irradiated Cu(In,Ga)Se2 (CIGS) solar cells and the thin films that composed the CIGS solar cell structure were investigated. The transmittance of indium tin oxide (ITO), ZnO:Al, ZnO:Ga, undoped ZnO, and CdS thin films did not change for a fluence of up to 1.5 × 1018 cm- 2. However, the resistivity of ZnO:Al and ZnO:Ga, which are generally used as window layers for CIGS solar cells, increased with increasing irradiation fluence. For CIGS thin films, the photoluminescence peak intensity due to Cu-related point defects, which do not significantly affect solar cell performance, increased with increasing electron irradiation. In CIGS solar cells, decreasing JSC and increasing Rs reflected the influence of irradiated ZnO:Al, and decreasing VOC and increasing Rsh mainly tended to reflect the pn-interface properties. These results may indicate that the surface ZnO:Al thin film and several heterojunctions tend to degrade easily by electron irradiation as compared with the bulk of semiconductor-composed solar cells.
AB - The optical and electrical properties of electron-irradiated Cu(In,Ga)Se2 (CIGS) solar cells and the thin films that composed the CIGS solar cell structure were investigated. The transmittance of indium tin oxide (ITO), ZnO:Al, ZnO:Ga, undoped ZnO, and CdS thin films did not change for a fluence of up to 1.5 × 1018 cm- 2. However, the resistivity of ZnO:Al and ZnO:Ga, which are generally used as window layers for CIGS solar cells, increased with increasing irradiation fluence. For CIGS thin films, the photoluminescence peak intensity due to Cu-related point defects, which do not significantly affect solar cell performance, increased with increasing electron irradiation. In CIGS solar cells, decreasing JSC and increasing Rs reflected the influence of irradiated ZnO:Al, and decreasing VOC and increasing Rsh mainly tended to reflect the pn-interface properties. These results may indicate that the surface ZnO:Al thin film and several heterojunctions tend to degrade easily by electron irradiation as compared with the bulk of semiconductor-composed solar cells.
KW - CIGS
KW - Electron irradiation
KW - Solar cell
KW - Transparent conducting oxide films
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U2 - 10.1016/j.tsf.2010.12.132
DO - 10.1016/j.tsf.2010.12.132
M3 - Article
AN - SCOPUS:80052178335
VL - 519
SP - 7321
EP - 7323
JO - Thin Solid Films
JF - Thin Solid Films
SN - 0040-6090
IS - 21
ER -