Optical and electrical properties of Co-doped epitaxial ZnO films

Zheng Wu Jin, T. Fukumura, K. Hasegawa, Y. Z. Yoo, K. Ando, T. Sekiguchi, P. Ahmet, T. Chikyow, T. Hasegawa, H. Koinuma, M. Kawasaki

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30 Citations (Scopus)

Abstract

Epitaxial ZnO films doped with Co were fabricated by the high throughput combinatorial laser molecular-beam epitaxy method. The solubility limit of Co in ZnO was determined. Transmission and cathodoluminescence spectra were measured to study the electronic structures of Co in Zn1-xCoxO films. Magnetoresistance behavior was measured for a selected sample co-doped with 1 mol% of Al to investigate s-d exchange interaction between the conducting s electron spins and the d electron spins localized at Co impurity. Huge magneto-optical effects comparable with that of Cd1-xMnxTe were observed on Zn1-xCoxO films.

Original languageEnglish
Pages (from-to)548-552
Number of pages5
JournalJournal of Crystal Growth
Volume237-239
Issue number1-4
DOIs
Publication statusPublished - 2002 Apr

Keywords

  • A3. Molecular beam epitaxy
  • B1. Zinc compounds
  • B2. Magneto-optic materials

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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    Jin, Z. W., Fukumura, T., Hasegawa, K., Yoo, Y. Z., Ando, K., Sekiguchi, T., Ahmet, P., Chikyow, T., Hasegawa, T., Koinuma, H., & Kawasaki, M. (2002). Optical and electrical properties of Co-doped epitaxial ZnO films. Journal of Crystal Growth, 237-239(1-4), 548-552. https://doi.org/10.1016/S0022-0248(01)01976-5