Optical and electrical properties of Co-doped epitaxial ZnO films

Zheng Wu Jin; T. Fukumura; K. Hasegawa; Y. Z. Yoo; K. Ando; T. Sekiguchi; P. Ahmet; T. Chikyow; T. Hasegawa; H. Koinuma; M. Kawasaki

doi:10.1016/S0022-0248(01)01976-5

Optical and electrical properties of Co-doped epitaxial ZnO films

Zheng Wu Jin, T. Fukumura, K. Hasegawa, Y. Z. Yoo, K. Ando, T. Sekiguchi, P. Ahmet, T. Chikyow, T. Hasegawa, H. Koinuma, M. Kawasaki

Research output: Contribution to journal › Article

30 Citations (Scopus)

Abstract

Epitaxial ZnO films doped with Co were fabricated by the high throughput combinatorial laser molecular-beam epitaxy method. The solubility limit of Co in ZnO was determined. Transmission and cathodoluminescence spectra were measured to study the electronic structures of Co in Zn_1-xCo_xO films. Magnetoresistance behavior was measured for a selected sample co-doped with 1 mol% of Al to investigate s-d exchange interaction between the conducting s electron spins and the d electron spins localized at Co impurity. Huge magneto-optical effects comparable with that of Cd_1-xMn_xTe were observed on Zn_1-xCo_xO films.

Original language	English
Pages (from-to)	548-552
Number of pages	5
Journal	Journal of Crystal Growth
Volume	237-239
Issue number	1-4
DOIs	https://doi.org/10.1016/S0022-0248(01)01976-5
Publication status	Published - 2002 Apr

Keywords

A3. Molecular beam epitaxy
B1. Zinc compounds
B2. Magneto-optic materials

ASJC Scopus subject areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

Access to Document

10.1016/S0022-0248(01)01976-5

Fingerprint Dive into the research topics of 'Optical and electrical properties of Co-doped epitaxial ZnO films'. Together they form a unique fingerprint.

Cite this

Jin, Z. W., Fukumura, T., Hasegawa, K., Yoo, Y. Z., Ando, K., Sekiguchi, T., Ahmet, P., Chikyow, T., Hasegawa, T., Koinuma, H., & Kawasaki, M. (2002). Optical and electrical properties of Co-doped epitaxial ZnO films. Journal of Crystal Growth, 237-239(1-4), 548-552. https://doi.org/10.1016/S0022-0248(01)01976-5

@article{e572676ce03346e1bfe07fbc37445a56,

title = "Optical and electrical properties of Co-doped epitaxial ZnO films",

abstract = "Epitaxial ZnO films doped with Co were fabricated by the high throughput combinatorial laser molecular-beam epitaxy method. The solubility limit of Co in ZnO was determined. Transmission and cathodoluminescence spectra were measured to study the electronic structures of Co in Zn1-xCoxO films. Magnetoresistance behavior was measured for a selected sample co-doped with 1 mol% of Al to investigate s-d exchange interaction between the conducting s electron spins and the d electron spins localized at Co impurity. Huge magneto-optical effects comparable with that of Cd1-xMnxTe were observed on Zn1-xCoxO films.",

keywords = "A3. Molecular beam epitaxy, B1. Zinc compounds, B2. Magneto-optic materials",

author = "Jin, {Zheng Wu} and T. Fukumura and K. Hasegawa and Yoo, {Y. Z.} and K. Ando and T. Sekiguchi and P. Ahmet and T. Chikyow and T. Hasegawa and H. Koinuma and M. Kawasaki",

year = "2002",

month = apr,

doi = "10.1016/S0022-0248(01)01976-5",

language = "English",

volume = "237-239",

pages = "548--552",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier",

number = "1-4",

}

TY - JOUR

T1 - Optical and electrical properties of Co-doped epitaxial ZnO films

AU - Jin, Zheng Wu

AU - Fukumura, T.

AU - Hasegawa, K.

AU - Yoo, Y. Z.

AU - Ando, K.

AU - Sekiguchi, T.

AU - Ahmet, P.

AU - Chikyow, T.

AU - Hasegawa, T.

AU - Koinuma, H.

AU - Kawasaki, M.

PY - 2002/4

Y1 - 2002/4

N2 - Epitaxial ZnO films doped with Co were fabricated by the high throughput combinatorial laser molecular-beam epitaxy method. The solubility limit of Co in ZnO was determined. Transmission and cathodoluminescence spectra were measured to study the electronic structures of Co in Zn1-xCoxO films. Magnetoresistance behavior was measured for a selected sample co-doped with 1 mol% of Al to investigate s-d exchange interaction between the conducting s electron spins and the d electron spins localized at Co impurity. Huge magneto-optical effects comparable with that of Cd1-xMnxTe were observed on Zn1-xCoxO films.

AB - Epitaxial ZnO films doped with Co were fabricated by the high throughput combinatorial laser molecular-beam epitaxy method. The solubility limit of Co in ZnO was determined. Transmission and cathodoluminescence spectra were measured to study the electronic structures of Co in Zn1-xCoxO films. Magnetoresistance behavior was measured for a selected sample co-doped with 1 mol% of Al to investigate s-d exchange interaction between the conducting s electron spins and the d electron spins localized at Co impurity. Huge magneto-optical effects comparable with that of Cd1-xMnxTe were observed on Zn1-xCoxO films.

KW - A3. Molecular beam epitaxy

KW - B1. Zinc compounds

KW - B2. Magneto-optic materials

UR - http://www.scopus.com/inward/record.url?scp=0036531107&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0036531107&partnerID=8YFLogxK

U2 - 10.1016/S0022-0248(01)01976-5

DO - 10.1016/S0022-0248(01)01976-5

M3 - Article

AN - SCOPUS:0036531107

VL - 237-239

SP - 548

EP - 552

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

SN - 0022-0248

IS - 1-4

ER -