Optical and electrical properties of AgIn(SSe)2 crystals

Kenji Yoshino, Naoji Mitani, Mutsumi Sugiyama, Shigefusa F. Chichibu, Hironori Komaki, Tetsuo Ikari

Research output: Contribution to journalConference articlepeer-review

20 Citations (Scopus)

Abstract

AgIn(SXSe1-X)2 (X = 0-1.0) crystals were grown by a vertical gradient freezing (VGF) method. All samples indicated chalcopyrite structures and n-types by means of X-ray diffraction (XRD) and thermoprobe analysis, respectively. All crystals were slightly found to be Se- and S-rich by the electron probe microanalysis (EPMA). The samples were also In-poor in X < 0.5 and Ag-poor in X > 0.5. The AgIn(S0.5Se0.5)2 (X = 0.5) crystal was mostly close to the stoichiometry. Lattice constants of a and c axes calculated by the XRD patterns were found to be proportional to X, indicating that they obeyed Vegard's law. In the photoluminescence (PL) spectra at 77K, the crystals were highly pure because a free exciton (FE) emission line was clearly observed. It was clear that the FE peak energy showed a nonlinear dependence on the composition X values in the AgIn(SXSe1-X)2 crystal. The bowing parameter was estimated to be 0.25 eV. After the AgInSe2 crystal was annealed at 640°C under a vacuum atmosphere in the AgInSe2 crystals, the optical quality was improved because the FE peak clearly appeared and the donor-acceptor pair emission band disappeared in the PL spectra.

Original languageEnglish
Pages (from-to)349-356
Number of pages8
JournalPhysica B: Condensed Matter
Volume302-303
DOIs
Publication statusPublished - 2001 Jun 30
Externally publishedYes
EventYanada Conference LIV. 9th International Conference on Shallow-Level Centers in Semiconductors - Awaji Island, Hyogo, Japan
Duration: 2000 Sep 242000 Sep 27

Keywords

  • AgIn(SSe)
  • Chalcopyrite
  • Hall measurement
  • Photoluminescence

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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