By a high pressure optical absorption experiment on epitaxially grown β-FeSi2 on Si (001) substrate, it is reported that the evaluated linear pressure coefficient of the direct band gap is smaller than that of common semiconductors.
|Number of pages||5|
|Journal||Physica Status Solidi (B) Basic Research|
|Publication status||Published - 2001 Jan 1|
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics