Abstract
The optical absorption in ultrathin silicon oxide films was studied by measuring their reflectance spectra in the vacuum ultraviolet. By applying a modified Kramers-Kronig analysis, with multiple reflections at the boundaries of the film taken into account, depth profiling was performed of the optical absorption in the oxide films near the SiO2/Si interface below the fundamental absorption edge of fused quartz. The structural imperfections contributing to this optical absorption were found to arise partly from Si-Si bonds localized within a distance of 1.4 nm from the interface in the oxide films.
Original language | English |
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Pages (from-to) | 2312-2318 |
Number of pages | 7 |
Journal | Physical Review B |
Volume | 46 |
Issue number | 4 |
DOIs | |
Publication status | Published - 1992 |
ASJC Scopus subject areas
- Condensed Matter Physics