Optical absorption in ultrathin silicon oxide films near the SiO2/Si interface

Naozumi Terada, Takashi Haga, Noriyuki Miyata, Kazunori Moriki, Masami Fujisawa, Mizuho Morita, Tadahiro Ohmi, Takeo Hattori

    Research output: Contribution to journalArticlepeer-review

    20 Citations (Scopus)

    Abstract

    The optical absorption in ultrathin silicon oxide films was studied by measuring their reflectance spectra in the vacuum ultraviolet. By applying a modified Kramers-Kronig analysis, with multiple reflections at the boundaries of the film taken into account, depth profiling was performed of the optical absorption in the oxide films near the SiO2/Si interface below the fundamental absorption edge of fused quartz. The structural imperfections contributing to this optical absorption were found to arise partly from Si-Si bonds localized within a distance of 1.4 nm from the interface in the oxide films.

    Original languageEnglish
    Pages (from-to)2312-2318
    Number of pages7
    JournalPhysical Review B
    Volume46
    Issue number4
    DOIs
    Publication statusPublished - 1992 Jan 1

    ASJC Scopus subject areas

    • Condensed Matter Physics

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