The reflectance spectra of ultrathin thermally grown silicon oxide films with thicknesses in the range from 6 to 18 nm were measured for the first time in vacuum ultraviolet using synchrotron orbital radiation. From the Kramers-Kronig analysis of these reflectance considering the multiple reflection in the oxide film, it has been found that the optical absorption in silicon oxide films below nearly 9 eV, which is the fundamental optical absorption edge of fused quartz, becomes appreciable with decreasing oxide film thickness or oxidation temperature.
|Number of pages||3|
|Journal||Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers|
|Publication status||Published - 1989 Nov|
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)