Optical absorption in ultrathin silicon oxide film

Noriyuki Miyata, Kazunori Moriki, Masami Fujisawa, Makoto Hirayama, Takayuki Matsukawa, Takeo Hattori

    Research output: Contribution to journalArticlepeer-review

    12 Citations (Scopus)


    The reflectance spectra of ultrathin thermally grown silicon oxide films with thicknesses in the range from 6 to 18 nm were measured for the first time in vacuum ultraviolet using synchrotron orbital radiation. From the Kramers-Kronig analysis of these reflectance considering the multiple reflection in the oxide film, it has been found that the optical absorption in silicon oxide films below nearly 9 eV, which is the fundamental optical absorption edge of fused quartz, becomes appreciable with decreasing oxide film thickness or oxidation temperature.

    Original languageEnglish
    Pages (from-to)2072-2074
    Number of pages3
    JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
    Issue number11
    Publication statusPublished - 1989 Nov

    ASJC Scopus subject areas

    • Physics and Astronomy (miscellaneous)


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