Abstract
The reflectance spectra of ultrathin thermally grown silicon oxide films with thicknesses in the range from 6 to 18 nm were measured for the first time in vacuum ultraviolet using synchrotron orbital radiation. From the Kramers-Kronig analysis of these reflectance considering the multiple reflection in the oxide film, it has been found that the optical absorption in silicon oxide films below nearly 9 eV, which is the fundamental optical absorption edge of fused quartz, becomes appreciable with decreasing oxide film thickness or oxidation temperature.
| Original language | English |
|---|---|
| Pages (from-to) | 2072-2074 |
| Number of pages | 3 |
| Journal | Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers |
| Volume | 28 |
| Issue number | 11 |
| Publication status | Published - 1989 Nov |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
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Cite this
Miyata, N., Moriki, K., Fujisawa, M., Hirayama, M., Matsukawa, T., & Hattori, T. (1989). Optical absorption in ultrathin silicon oxide film. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 28(11), 2072-2074.