Optical absorption in ultrathin silicon oxide film

Noriyuki Miyata, Kazunori Moriki, Masami Fujisawa, Makoto Hirayama, Takayuki Matsukawa, Takeo Hattori

    Research output: Contribution to journalArticle

    12 Citations (Scopus)

    Abstract

    The reflectance spectra of ultrathin thermally grown silicon oxide films with thicknesses in the range from 6 to 18 nm were measured for the first time in vacuum ultraviolet using synchrotron orbital radiation. From the Kramers-Kronig analysis of these reflectance considering the multiple reflection in the oxide film, it has been found that the optical absorption in silicon oxide films below nearly 9 eV, which is the fundamental optical absorption edge of fused quartz, becomes appreciable with decreasing oxide film thickness or oxidation temperature.

    Original languageEnglish
    Pages (from-to)2072-2074
    Number of pages3
    JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
    Volume28
    Issue number11
    Publication statusPublished - 1989 Nov

    ASJC Scopus subject areas

    • Physics and Astronomy (miscellaneous)

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  • Cite this

    Miyata, N., Moriki, K., Fujisawa, M., Hirayama, M., Matsukawa, T., & Hattori, T. (1989). Optical absorption in ultrathin silicon oxide film. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 28(11), 2072-2074.