Optical absorption in silicon oxide film near the SiO2/Si interface

Takashi Haga, Noriyuki Miyata, Kazunori Moriki, Masami Fujisawa, Tatsunori Kaneoka, Makoto Hirayama, Takayuki Matsukawa, Takeo Hattori

    Research output: Contribution to conferencePaperpeer-review

    Abstract

    The contribution of SiO2/Si interface to optical absorption below the optical absorption edge of fused quartz was studied from the measurement of change in reflectance spectra of silicon oxide films produced by chemical etching. From the modified Kramers-Kronig analysis of these reflectance considering multiple reflection in the films, it is found that optical absorption detected at the photon energy of 7.8 eV arises from Si-Si bond in the oxide film within 6 nm from the SiO2/Si interface. The amount of Si-Si bond is evaluated to be 3 × 1014 cm-2.

    Original languageEnglish
    Pages1123-1126
    Number of pages4
    DOIs
    Publication statusPublished - 1990
    Event22nd International Conference on Solid State Devices and Materials - Sendai, Jpn
    Duration: 1990 Aug 221990 Aug 24

    Other

    Other22nd International Conference on Solid State Devices and Materials
    CitySendai, Jpn
    Period90/8/2290/8/24

    ASJC Scopus subject areas

    • Engineering(all)

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