Optical absorption characteristic of highly ordered and dense two-dimensional array of silicon nanodiscs

Chi Hsien Huang, Xuan Yu Wang, Makoto Igarashi, Akihiro Murayama, Yoshitaka Okada, Ichiro Yamashita, Seiji Samukawa

Research output: Contribution to journalArticlepeer-review

30 Citations (Scopus)

Abstract

We created a two-dimensional array of sub-10 nm Si-nanodiscs (Si-NDs), i.e. a 2D array of Si-NDs, with a highly ordered arrangement and dense NDs by using a new top-down technique comprising advanced damage-free neutral-beam (NB) etching and a bio-template (iron oxide core) as a uniform sub-10 nm etching mask. The bandgap energy (Eg) of the fabricated 2D array of Si-NDs can be simply controlled from 2.2 to 1.3 eV by changing the ND thickness from 2 to 12 nm. Due to weak quantum confinement existing in the diameter direction resulting from the sub-10 nm Si-ND diameter, even though the thickness of the Si-ND is much larger than the Bohr radius of Si, Eg is still larger than the 1.1 eV Eg of bulk Si. Si-ND not only has wide controllable Eg but also a high absorption coefficient due to quantum confinement in three dimensions. This new technique is a promising candidate for developing new nanostructures and could be integrated into the fabrication of nanoelectronic devices.

Original languageEnglish
Article number105301
JournalNanotechnology
Volume22
Issue number10
DOIs
Publication statusPublished - 2011 Mar 11

ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering
  • Electrical and Electronic Engineering

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