Optical absorption by E+ miniband of GaAs:N δ-doped superlattices

Shuhei Yagi, Shunsuke Noguchi, Yasuto Hijikata, Shigeyuki Kuboya, Kentaro Onabe, Yoshitaka Okada, Hiroyuki Yaguchi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The optical properties of GaAs:N δ-doped superlattices (SLs) are investigated by photoreflectance (PR), photo luminescence (PL) and photoluminescence excitation (PLE) spectroscopy. A direct evidence of the optical absorption due to an E+ related band of a GaAs:N δ-doped SLs is indicated as a clear absorption edge at 1.6 eV by PLE. AlGaAs layers fabricated on the both sides of the SL region exclude the effect of GaAs absorption on the PLE spectrum, resulting in the successful detection of the absorption property of the SL. In addition, some preliminary characterization of a solar cell using a GaAs:N δ-doped SL is shown. The photocarrier generation originating from SL miniband absorption is confirmed by quantum efficiency measurements.

Original languageEnglish
Title of host publication39th IEEE Photovoltaic Specialists Conference, PVSC 2013
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages2490-2493
Number of pages4
ISBN (Print)9781479932993
DOIs
Publication statusPublished - 2013
Event39th IEEE Photovoltaic Specialists Conference, PVSC 2013 - Tampa, FL, United States
Duration: 2013 Jun 162013 Jun 21

Publication series

NameConference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)0160-8371

Other

Other39th IEEE Photovoltaic Specialists Conference, PVSC 2013
Country/TerritoryUnited States
CityTampa, FL
Period13/6/1613/6/21

Keywords

  • III-V semiconductor materials
  • Nanostructures
  • Solar energy
  • Spectroscopy
  • Superlattices

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering

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