TY - GEN
T1 - Opportunity of single atom control for quantum processing in silicon and diamond
AU - Shinada, Takahiro
AU - Enrico, Prati
AU - Tamura, Syuto
AU - Tanii, Takashi
AU - Teraji, Tokuyuki
AU - Onoda, Shinobu
AU - Ohshima, Takeshi
AU - McGuinness, Liam P.
AU - Rogers, Lachlan
AU - Naydenov, Boris
AU - Jelezko, Fedor
AU - Isoya, Junichi
N1 - Funding Information:
This work is supported by Grant-in-Aid for Scientific Research (nos. 25289109 and 23226009) from MEXT, Japan.
Publisher Copyright:
© 2014 IEEE.
PY - 2015/12/4
Y1 - 2015/12/4
N2 - Future CMOS will require the placement of dopants in a predetermined location, namely, a single atom control. Deterministic doping method, i.e. single-ion implantation, realizes ordered arrays of single-atoms in silicon, diamond and other materials, which might provide opportunities to single-dopant transport or single-photon source beneficial to quantum processing.
AB - Future CMOS will require the placement of dopants in a predetermined location, namely, a single atom control. Deterministic doping method, i.e. single-ion implantation, realizes ordered arrays of single-atoms in silicon, diamond and other materials, which might provide opportunities to single-dopant transport or single-photon source beneficial to quantum processing.
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U2 - 10.1109/SNW.2014.7348533
DO - 10.1109/SNW.2014.7348533
M3 - Conference contribution
AN - SCOPUS:84963799344
T3 - 2014 Silicon Nanoelectronics Workshop, SNW 2014
BT - 2014 Silicon Nanoelectronics Workshop, SNW 2014
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - Silicon Nanoelectronics Workshop, SNW 2014
Y2 - 8 June 2014 through 9 June 2014
ER -