TY - JOUR
T1 - Operating limits for stable growth of silicon fibers with diameter less than 150 μm by modified μ-PD method
AU - Epelbaum, Boris M.
AU - Shimamura, Kiyoshi
AU - Uda, Satoshi
AU - Kon, Junichi
AU - Fukuda, Tsuguo
PY - 1996/1/1
Y1 - 1996/1/1
N2 - The μ-PD method originally developed for oxide crystals has been modified and applied for filamentary silicon crystal growth. Our main modification of μ-PD method is concerned with an arrangement of melt permeable feeder which is inserted into the nozzle. The feeder finishes by a sharp tip the diameter of which (is almost the same as that of the desired semiconductor fiber, i.e., less than 150 μm. Silicon fibers were grown from the small liquid pool at the end of the feeder. Three types of crucible-die arrangement were designed and tested. The best results were obtained with the help of inclined insert made of graphite fibers because of its ability to quench oscillations and longer operation life. Fiber crystals, 100 μm in diameter and 70 mm in length, have been grown successfully. Small meniscus stability, operating limits of μ-PD method and silicon carbide formation during the growth process are discussed.
AB - The μ-PD method originally developed for oxide crystals has been modified and applied for filamentary silicon crystal growth. Our main modification of μ-PD method is concerned with an arrangement of melt permeable feeder which is inserted into the nozzle. The feeder finishes by a sharp tip the diameter of which (is almost the same as that of the desired semiconductor fiber, i.e., less than 150 μm. Silicon fibers were grown from the small liquid pool at the end of the feeder. Three types of crucible-die arrangement were designed and tested. The best results were obtained with the help of inclined insert made of graphite fibers because of its ability to quench oscillations and longer operation life. Fiber crystals, 100 μm in diameter and 70 mm in length, have been grown successfully. Small meniscus stability, operating limits of μ-PD method and silicon carbide formation during the growth process are discussed.
UR - http://www.scopus.com/inward/record.url?scp=0030380908&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0030380908&partnerID=8YFLogxK
U2 - 10.1002/crat.2170310817
DO - 10.1002/crat.2170310817
M3 - Article
AN - SCOPUS:0030380908
VL - 31
SP - 1077
EP - 1084
JO - Crystal Research and Technology
JF - Crystal Research and Technology
SN - 0232-1300
IS - 8
ER -