Onset of exciton absorption in modulation-doped GaAs quantum wells

G. Yusa, H. Shtrikman, I. Bar-Joseph

Research output: Contribution to journalArticlepeer-review

39 Citations (Scopus)

Abstract

We study the evolution of the absorption spectrum of a modulation-doped GaAs/AlxGa1-xAs semiconductor quantum well with decreasing the carrier density. We find that at some critical electron density there is a sharp change in the line shape and the transitions energies of the exciton peaks. We show that this critical density marks an abrupt transition from a simple excitonic behavior to a Fermi edge singularity.

Original languageEnglish
Pages (from-to)15390-15393
Number of pages4
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume62
Issue number23
DOIs
Publication statusPublished - 2000 Dec 15

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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