One unit-cell seed layer induced epitaxial growth of heavily nitrogen doped anatase TiO2 films

T. L. Chen, Y. Hirose, Taro Hitosugi, T. Hasegawa

    Research output: Contribution to journalArticle

    14 Citations (Scopus)

    Abstract

    We present a novel way to obtain heavily nitrogen doped anatase TiO 2 films by using a solid-state nitrogen source. Epitaxial growth of the films was realized by introducing one unit-cell seed layer, which was indicated by reflection high-energy electron diffraction as intensity oscillation. Results of x-ray diffraction and x-ray photoelectron spectroscopy confirmed that the films were in the anatase phase heavily doped with nitrogen of ∼15 at%. The films obtained exhibited considerable narrowing of the optical bandgap, resulting in an enhancement of absorption in the visible-light region.

    Original languageEnglish
    Article number062005
    JournalJournal of Physics D: Applied Physics
    Volume41
    Issue number6
    DOIs
    Publication statusPublished - 2008 Mar 21

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Condensed Matter Physics
    • Acoustics and Ultrasonics
    • Surfaces, Coatings and Films

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