TY - JOUR
T1 - One-step synthesis of K xFe 2-ySe 2 single crystal for high critical current density
AU - Ozaki, Toshinori
AU - Takeya, Hiroyuki
AU - Okazaki, Hiroyuki
AU - Deguchi, Keita
AU - Demura, Satoshi
AU - Kawasaki, Yasuna
AU - Hara, Hiroshi
AU - Watanabe, Tohru
AU - Yamaguchi, Takahide
AU - Takano, Yoshihiko
PY - 2012/4
Y1 - 2012/4
N2 - We have established a simple process that allows for the one-step synthesis of K xFe 2-ySe 2 single crystals, which exhibit high critical current density J c. The post annealing and quenching technique has improved the homogeneity of as-grown crystals, resulting in full shielding of the external magnetic field. The quenched crystals show a superconducting transition at T c onset=32.9 K and T c zero=32.1 K. The upper critical fields μ 0 H 02 (0) for Hab and Hc are estimated to be ∼206 and ∼50 T, respectively. The critical current densities J c for Hab and Hc reach as high as 1.0×10 5 and 3.4×10 4 A/cm 2 at 5 K. Furthermore, J c exhibits a high field performance and a significantly weak temperature dependence up to 5 T, suggesting strong pinning. These results demonstrate that K xFe 2-ySe 2 would be a promising candidate material for practical applications.
AB - We have established a simple process that allows for the one-step synthesis of K xFe 2-ySe 2 single crystals, which exhibit high critical current density J c. The post annealing and quenching technique has improved the homogeneity of as-grown crystals, resulting in full shielding of the external magnetic field. The quenched crystals show a superconducting transition at T c onset=32.9 K and T c zero=32.1 K. The upper critical fields μ 0 H 02 (0) for Hab and Hc are estimated to be ∼206 and ∼50 T, respectively. The critical current densities J c for Hab and Hc reach as high as 1.0×10 5 and 3.4×10 4 A/cm 2 at 5 K. Furthermore, J c exhibits a high field performance and a significantly weak temperature dependence up to 5 T, suggesting strong pinning. These results demonstrate that K xFe 2-ySe 2 would be a promising candidate material for practical applications.
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U2 - 10.1209/0295-5075/98/27002
DO - 10.1209/0295-5075/98/27002
M3 - Article
AN - SCOPUS:84860508731
VL - 98
JO - Journal de Physique (Paris), Lettres
JF - Journal de Physique (Paris), Lettres
SN - 0295-5075
IS - 2
M1 - 27002
ER -