TY - JOUR
T1 - One-dimensional fast migration of vacancy clusters in metals
AU - Matsukawa, Yoshitaka
AU - Zinkle, Steven J.
PY - 2007/11/2
Y1 - 2007/11/2
N2 - The migration of point defects, for example, crystal lattice vacancies and self-interstitial atoms (SIAs), typically occurs through three-dimensional random walk in crystalline solids. However, when vacancies and SIAs agglomerate to form planar clusters, the migration mode may change. We observed nanometer-sized clusters of vacancies exhibiting one-dimensional (1D) fast migration. The 1D migration transported a vacancy cluster containing several hundred vacancies with a mobility higher than that of a single vacancy random walk and a mobility comparable to a single SIA random walk. Moreover, we found that the 1D migration may be a key physical mechanism for self-organization of nanometer-sized sessile vacancy cluster (stacking fault tetrahedron) arrays. Harnessing this 1D migration mode may enable new control of defect microstructures such as effective defect removal and introduction of ordered nanostructures in materials, including semiconductors.
AB - The migration of point defects, for example, crystal lattice vacancies and self-interstitial atoms (SIAs), typically occurs through three-dimensional random walk in crystalline solids. However, when vacancies and SIAs agglomerate to form planar clusters, the migration mode may change. We observed nanometer-sized clusters of vacancies exhibiting one-dimensional (1D) fast migration. The 1D migration transported a vacancy cluster containing several hundred vacancies with a mobility higher than that of a single vacancy random walk and a mobility comparable to a single SIA random walk. Moreover, we found that the 1D migration may be a key physical mechanism for self-organization of nanometer-sized sessile vacancy cluster (stacking fault tetrahedron) arrays. Harnessing this 1D migration mode may enable new control of defect microstructures such as effective defect removal and introduction of ordered nanostructures in materials, including semiconductors.
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U2 - 10.1126/science.1148336
DO - 10.1126/science.1148336
M3 - Article
C2 - 17991860
AN - SCOPUS:36048965124
VL - 318
SP - 959
EP - 962
JO - Science
JF - Science
SN - 0036-8075
IS - 5852
ER -