One-angstrom-resolution element mapping by phase contrast ARHVEM technique

A. C. Iwamoto, X. Q. Shen, H. Okumura, H. Matsuhata, Yuichi Ikuhara

    Research output: Contribution to journalConference articlepeer-review


    Atomic-resolution high-voltage electron microscopy (ARHVEM) was applied to analyze the chemical information around heterointerfaces of GaN/AlN layers. The atomic positions of cations and N could be directly determined from a single image using ARHVEM. With assistance of computer simulations, it become apparent that the contrast of the cations varied depending on their elements in ARHVEM images, under appropriate defocus conditions and within a certain region of crystal thickness. The experimentally observed ARHVEM images were compared with simulated images, and the GaN/AIN structure was analyzed at the atomic level.

    Original languageEnglish
    Pages (from-to)15-18
    Number of pages4
    JournalDesign and Nature
    Publication statusPublished - 2004 Nov 17
    EventDesign and Nature II: Comparing Design in Nature with Science and Engineering - Rhodes, Greece
    Duration: 2004 Jun 282004 Jun 30

    ASJC Scopus subject areas

    • Engineering(all)


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