On-wafer monitoring of electron and ion energy distribution at the bottom of contact hole

Hiroto Ohtake, Butsurin Jinnai, Yuya Suzuki, Shinnosuke Soda, Tadashi Shimmura, Seiji Samukawa

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)

Abstract

In situ on-wafer monitoring of the electron and ion energies at the contact-hole bottom is primarily achieved in Ar ultrahigh-frequency plasma. The on-wafer probe reveals a lower electron density and higher electron temperature at the contact-hole bottom due to the electron-shading effect, as compared with that in the bulk plasma. The on-wafer probe also shows the ion energy distribution function (IEDF) at the contact-hole bottom. The peak energy of IEDF corresponded to the sheath potential. Accordingly, the authors found that the on-wafer probe is a very effective tool for investigating the electron and ion energies in real SiO2 contact structures.

Original languageEnglish
Pages (from-to)400-403
Number of pages4
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume25
Issue number2
DOIs
Publication statusPublished - 2007

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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