TY - JOUR
T1 - On-wafer monitoring of electron and ion energy distribution at the bottom of contact hole
AU - Ohtake, Hiroto
AU - Jinnai, Butsurin
AU - Suzuki, Yuya
AU - Soda, Shinnosuke
AU - Shimmura, Tadashi
AU - Samukawa, Seiji
N1 - Funding Information:
The monitoring device to evaluate the electron and ion energy was developed at the Venture Business Laboratory of Tohoku University. This work was supported by the Semiconductor Technology Academic Research Center (STARC).
PY - 2007
Y1 - 2007
N2 - In situ on-wafer monitoring of the electron and ion energies at the contact-hole bottom is primarily achieved in Ar ultrahigh-frequency plasma. The on-wafer probe reveals a lower electron density and higher electron temperature at the contact-hole bottom due to the electron-shading effect, as compared with that in the bulk plasma. The on-wafer probe also shows the ion energy distribution function (IEDF) at the contact-hole bottom. The peak energy of IEDF corresponded to the sheath potential. Accordingly, the authors found that the on-wafer probe is a very effective tool for investigating the electron and ion energies in real SiO2 contact structures.
AB - In situ on-wafer monitoring of the electron and ion energies at the contact-hole bottom is primarily achieved in Ar ultrahigh-frequency plasma. The on-wafer probe reveals a lower electron density and higher electron temperature at the contact-hole bottom due to the electron-shading effect, as compared with that in the bulk plasma. The on-wafer probe also shows the ion energy distribution function (IEDF) at the contact-hole bottom. The peak energy of IEDF corresponded to the sheath potential. Accordingly, the authors found that the on-wafer probe is a very effective tool for investigating the electron and ion energies in real SiO2 contact structures.
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U2 - 10.1116/1.2712200
DO - 10.1116/1.2712200
M3 - Article
AN - SCOPUS:34047182652
VL - 25
SP - 400
EP - 403
JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
SN - 1071-1023
IS - 2
ER -