On-wafer monitoring of electron and ion energy distribution at the bottom of contact hole

Hiroto Ohtake; Butsurin Jinnai; Yuya Suzuki; Shinnosuke Soda; Tadashi Shimmura; Seiji Samukawa

doi:10.1116/1.2712200

On-wafer monitoring of electron and ion energy distribution at the bottom of contact hole

Hiroto Ohtake, Butsurin Jinnai, Yuya Suzuki, Shinnosuke Soda, Tadashi Shimmura, Seiji Samukawa

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

In situ on-wafer monitoring of the electron and ion energies at the contact-hole bottom is primarily achieved in Ar ultrahigh-frequency plasma. The on-wafer probe reveals a lower electron density and higher electron temperature at the contact-hole bottom due to the electron-shading effect, as compared with that in the bulk plasma. The on-wafer probe also shows the ion energy distribution function (IEDF) at the contact-hole bottom. The peak energy of IEDF corresponded to the sheath potential. Accordingly, the authors found that the on-wafer probe is a very effective tool for investigating the electron and ion energies in real SiO₂ contact structures.

Original language	English
Pages (from-to)	400-403
Number of pages	4
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	25
Issue number	2
DOIs	https://doi.org/10.1116/1.2712200
Publication status	Published - 2007

ASJC Scopus subject areas

Condensed Matter Physics
Electrical and Electronic Engineering

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On-wafer monitoring of electron and ion energy distribution at the bottom of contact hole. / Ohtake, Hiroto; Jinnai, Butsurin; Suzuki, Yuya; Soda, Shinnosuke; Shimmura, Tadashi; Samukawa, Seiji.

In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 25, No. 2, 2007, p. 400-403.

Research output: Contribution to journal › Article › peer-review

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abstract = "In situ on-wafer monitoring of the electron and ion energies at the contact-hole bottom is primarily achieved in Ar ultrahigh-frequency plasma. The on-wafer probe reveals a lower electron density and higher electron temperature at the contact-hole bottom due to the electron-shading effect, as compared with that in the bulk plasma. The on-wafer probe also shows the ion energy distribution function (IEDF) at the contact-hole bottom. The peak energy of IEDF corresponded to the sheath potential. Accordingly, the authors found that the on-wafer probe is a very effective tool for investigating the electron and ion energies in real SiO2 contact structures.",

author = "Hiroto Ohtake and Butsurin Jinnai and Yuya Suzuki and Shinnosuke Soda and Tadashi Shimmura and Seiji Samukawa",

note = "Funding Information: The monitoring device to evaluate the electron and ion energy was developed at the Venture Business Laboratory of Tohoku University. This work was supported by the Semiconductor Technology Academic Research Center (STARC).",

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AU - Ohtake, Hiroto

AU - Jinnai, Butsurin

AU - Suzuki, Yuya

AU - Soda, Shinnosuke

AU - Shimmura, Tadashi

AU - Samukawa, Seiji

N1 - Funding Information: The monitoring device to evaluate the electron and ion energy was developed at the Venture Business Laboratory of Tohoku University. This work was supported by the Semiconductor Technology Academic Research Center (STARC).

PY - 2007

Y1 - 2007

N2 - In situ on-wafer monitoring of the electron and ion energies at the contact-hole bottom is primarily achieved in Ar ultrahigh-frequency plasma. The on-wafer probe reveals a lower electron density and higher electron temperature at the contact-hole bottom due to the electron-shading effect, as compared with that in the bulk plasma. The on-wafer probe also shows the ion energy distribution function (IEDF) at the contact-hole bottom. The peak energy of IEDF corresponded to the sheath potential. Accordingly, the authors found that the on-wafer probe is a very effective tool for investigating the electron and ion energies in real SiO2 contact structures.

AB - In situ on-wafer monitoring of the electron and ion energies at the contact-hole bottom is primarily achieved in Ar ultrahigh-frequency plasma. The on-wafer probe reveals a lower electron density and higher electron temperature at the contact-hole bottom due to the electron-shading effect, as compared with that in the bulk plasma. The on-wafer probe also shows the ion energy distribution function (IEDF) at the contact-hole bottom. The peak energy of IEDF corresponded to the sheath potential. Accordingly, the authors found that the on-wafer probe is a very effective tool for investigating the electron and ion energies in real SiO2 contact structures.

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On-wafer monitoring of electron and ion energy distribution at the bottom of contact hole

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