On-wafer monitoring of electron and ion energy distribution at the bottom of contact hole

Hiroto Ohtake; Butsurin Jinnai; Yuya Suzuki; Shinnosuke Soda; Tadashi Shimmura; Seiji Samukawa

doi:10.1116/1.2712200

On-wafer monitoring of electron and ion energy distribution at the bottom of contact hole

Hiroto Ohtake, Butsurin Jinnai, Yuya Suzuki, Shinnosuke Soda, Tadashi Shimmura, Seiji Samukawa

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

In situ on-wafer monitoring of the electron and ion energies at the contact-hole bottom is primarily achieved in Ar ultrahigh-frequency plasma. The on-wafer probe reveals a lower electron density and higher electron temperature at the contact-hole bottom due to the electron-shading effect, as compared with that in the bulk plasma. The on-wafer probe also shows the ion energy distribution function (IEDF) at the contact-hole bottom. The peak energy of IEDF corresponded to the sheath potential. Accordingly, the authors found that the on-wafer probe is a very effective tool for investigating the electron and ion energies in real SiO₂ contact structures.

Original language	English
Pages (from-to)	400-403
Number of pages	4
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	25
Issue number	2
DOIs	https://doi.org/10.1116/1.2712200
Publication status	Published - 2007

ASJC Scopus subject areas

Condensed Matter Physics
Electrical and Electronic Engineering

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On-wafer monitoring of electron and ion energy distribution at the bottom of contact hole. / Ohtake, Hiroto; Jinnai, Butsurin; Suzuki, Yuya; Soda, Shinnosuke; Shimmura, Tadashi; Samukawa, Seiji.

In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 25, No. 2, 2007, p. 400-403.

Research output: Contribution to journal › Article › peer-review

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abstract = "In situ on-wafer monitoring of the electron and ion energies at the contact-hole bottom is primarily achieved in Ar ultrahigh-frequency plasma. The on-wafer probe reveals a lower electron density and higher electron temperature at the contact-hole bottom due to the electron-shading effect, as compared with that in the bulk plasma. The on-wafer probe also shows the ion energy distribution function (IEDF) at the contact-hole bottom. The peak energy of IEDF corresponded to the sheath potential. Accordingly, the authors found that the on-wafer probe is a very effective tool for investigating the electron and ion energies in real SiO2 contact structures.",

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AU - Ohtake, Hiroto

AU - Jinnai, Butsurin

AU - Suzuki, Yuya

AU - Soda, Shinnosuke

AU - Shimmura, Tadashi

AU - Samukawa, Seiji

PY - 2007

Y1 - 2007

N2 - In situ on-wafer monitoring of the electron and ion energies at the contact-hole bottom is primarily achieved in Ar ultrahigh-frequency plasma. The on-wafer probe reveals a lower electron density and higher electron temperature at the contact-hole bottom due to the electron-shading effect, as compared with that in the bulk plasma. The on-wafer probe also shows the ion energy distribution function (IEDF) at the contact-hole bottom. The peak energy of IEDF corresponded to the sheath potential. Accordingly, the authors found that the on-wafer probe is a very effective tool for investigating the electron and ion energies in real SiO2 contact structures.

AB - In situ on-wafer monitoring of the electron and ion energies at the contact-hole bottom is primarily achieved in Ar ultrahigh-frequency plasma. The on-wafer probe reveals a lower electron density and higher electron temperature at the contact-hole bottom due to the electron-shading effect, as compared with that in the bulk plasma. The on-wafer probe also shows the ion energy distribution function (IEDF) at the contact-hole bottom. The peak energy of IEDF corresponded to the sheath potential. Accordingly, the authors found that the on-wafer probe is a very effective tool for investigating the electron and ion energies in real SiO2 contact structures.

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On-wafer monitoring of electron and ion energy distribution at the bottom of contact hole

Abstract

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