On-wafer monitoring for conductivity of sidewall in SiO2 contact holes

T. Shinmura, S. Soda, M. Koyanagi, K. Hane, S. Samukawa

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

This paper reports on on-wafer monitoring of the conductivity of sidewall-deposited polymer in high-aspect contact holes for the first time. We have found that a carbon-rich polymer causes higher conductivity of sidewall surfaces.

Original languageEnglish
Title of host publication2002 7th International Symposium on Plasma- and Process-Induced Damage, P2ID 2002
EditorsCalvin T. Gabriel, Terence Hook, Koji Eriguchi
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages102-105
Number of pages4
ISBN (Electronic)0965157776
DOIs
Publication statusPublished - 2002
Event7th International Symposium on Plasma- and Process-Induced Damage, P2ID 2002 - Maui, United States
Duration: 2002 Jun 52002 Jun 7

Publication series

NameInternational Symposium on Plasma Process-Induced Damage, P2ID, Proceedings
Volume2002-January

Other

Other7th International Symposium on Plasma- and Process-Induced Damage, P2ID 2002
CountryUnited States
CityMaui
Period02/6/502/6/7

Keywords

  • Conductivity
  • Electrodes
  • Electrons
  • Etching
  • Monitoring
  • Plasma applications
  • Plasma measurements
  • Plasma temperature
  • Semiconductor films
  • Silicon

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Condensed Matter Physics

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