The microscopic strain fluctuation in strained-Si grown on SiGe-on-insulator (SGOI) and SiGe virtual substrates was investigated. A periodic strain distribution originating from cross-hatch pattern of the substrate was observed in the sample of virtual substrate. No such pattern was observed in SGOI and was found to be free from dislocation network. The origin of strain fluctuation of strained Si were found to compositional fluctuation of SOGI and virtual substrate.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)