On the origin of strain fluctuation in strained-Si grown on SiGe-on-insulator and SiGe virtual substrates

Kentaro Kutsukake, Noritaka Usami, Toru Ujihara, Kozo Fujiwara, Gen Sazaki, Kazuo Nakajima

Research output: Contribution to journalArticlepeer-review

20 Citations (Scopus)

Abstract

The microscopic strain fluctuation in strained-Si grown on SiGe-on-insulator (SGOI) and SiGe virtual substrates was investigated. A periodic strain distribution originating from cross-hatch pattern of the substrate was observed in the sample of virtual substrate. No such pattern was observed in SGOI and was found to be free from dislocation network. The origin of strain fluctuation of strained Si were found to compositional fluctuation of SOGI and virtual substrate.

Original languageEnglish
Pages (from-to)1335-1337
Number of pages3
JournalApplied Physics Letters
Volume85
Issue number8
DOIs
Publication statusPublished - 2004 Aug 23

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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